EPC2014 Discrete Semiconductor Products

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The EPC2014 application field and working principle make it a great tool for transistors and FETs. Specifically, single MOSFETs are the first use cases for this advanced semiconductor technology. What makes the EPC2014 so beneficial for transistors, and single MOSFETs in particular, is both the functionality and functionality per area (FPA) it features.

The EPC2014 platform is a new type of high voltage N-channel MOSFET technology - developed by Enpirion, Inc. It supports up to 75V operation and can be used in applications where higher voltages would make conventional power MOSFETs problematic. The High Voltage (HV) gate drive voltage requirement can be as low as 0.3V, the package size is compact, and the product provides a significant increase in FPA versus previous generations.

The EPC2014 works using a breakdown voltage (Vbr) of 75V as its primary defining feature. Ideally, it should be used in applications where maximum application voltages are less than or equal to its rated 75V. While its HV gate drive voltage requirement is only 0.3V, it will not be possible to benefit from the superior power efficiency and reduced thermal loading unless the gate is driven lower than the drain voltage of the device.

The EPC2014 features an electron avalanche process, which works in much the same way as an avalanche effect used in other power MOSFETs. However, the electron avalanche process of the EPC2014 amplifier is more efficient and reduces energy dissipation. Additionally, the charge stored in each EPC2014 transistor is greater compared to traditional MOSFETs. This helps improve the lifetime and performance of the device.

The EPC2014 also benefits from a wide and flat region of operation, minimizing power losses due to energy switches and higher load resistance values. This provides efficient operation at low-to-medium drain currents - a feature that is especially useful for single MOSFET devices. Furthermore, the EPC2014’s wide flat plateau reduces the need for complex gate driver circuitry.

Designs implemented with the EPC2014 transistors can also benefit from lower power consumption, as the EPC2014 amplifier allows lower voltage operation and offers improved power efficiency. Moreover, since the EPC2014 can support fast switching and high levels of integration on a single chip, engineers can reduce the number of components necessary for their designs.

In summary, the EPC2014 application field and working principle make it a great choice for transistors, particularly those in single MOSFET applications. Its breakdown voltage of 75V combined with the electron avalanche process make it an efficient, reliable, and high performance solution for high-voltage digital and analog designs.

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