EPC2107 Discrete Semiconductor Products |
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Allicdata Part #: | 917-1168-2-ND |
Manufacturer Part#: |
EPC2107 |
Price: | $ 0.67 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | EPC |
Short Description: | MOSFET 3 N-CH 100V 9BGA |
More Detail: | Mosfet Array 3 N-Channel (Half Bridge + Synchronou... |
DataSheet: | EPC2107 Datasheet/PDF |
Quantity: | 17500 |
2500 +: | $ 0.60641 |
Series: | eGaN® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 3 N-Channel (Half Bridge + Synchronous Bootstrap) |
FET Feature: | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 1.7A, 500mA |
Rds On (Max) @ Id, Vgs: | 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V |
Vgs(th) (Max) @ Id: | 2.5V @ 100µA, 2.5V @ 20µA |
Gate Charge (Qg) (Max) @ Vgs: | 0.16nC @ 5V, 0.044nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: | 16pF @ 50V, 7pF @ 50V |
Power - Max: | -- |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 9-VFBGA |
Supplier Device Package: | 9-BGA (1.35x1.35) |
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The EPC2107 application field and working principle most commonly refers to a type of field effect transistor (FET) array. It is a type of compound semiconductor device made of gallium arsenide that is used to generate power or current, control signals, and amplify weak signals. The EPC2107 is typically sold in single-chip array configurations with gate widths of 10, 18, and 24. These gate widths offer differing levels of power and current, which can be advantageous for different applications. Additionally, the EPC2107 can be customized for different applications with different chip architectures and manufacturing processes.
The EPC2107 functions by allowing current to flow from the drain to the source when the gate electrode is biased in the forward direction. It is the defining characteristic of a FET. This occurs due to the electric field generated by the gate electrode, which causes a conducting channel to form from source to drain. This channel is known as a depletion region, and its size is determined by the amount of electric field generated. From this channel, current is able to flow from source to drain and the power generated is proportional to the number of electrons in the channel. The maximum amount of power that can be generated is dependent upon the amount of voltage used to turn on the FET.
The EPC2107 also offers a variety of other features that make it advantageous over the other FETs that are available on the market today. For example, the EPC2107 offers a wide range of gate-source resistance ratings, allowing for better heat dissipation and a greater propensity for higher current. The EPC2107 also has a high transconductance value, allowing for greater sensitivity to the input signal. The industry-standard 2x2 package provides an efficient form factor, and the EPC2107 is compatible with most CMOS and TTL logic families. Finally, the EPC2107 is equipped with a built-in avalanche detector and reverse-voltage protection, making it an excellent choice for applications that involve DC voltages.
The EPC2107 is an excellent option for applications such as power supplies, robotics, and automation. In power supplies, the FETs can be used to switch the current on and off, allowing for efficient control of the power consumption. In robotics, the EPC2107 can be used for controlling the movement of motors and arms. In automation, the FETs can be used to control signals, allowing for a higher degree of accuracy and accuracy than traditional mechanical switches.
Overall, the EPC2107 is an excellent field effect transistor array. It offers the advantages of a high level of power and current, a wide range of gate-source resistance ratings, a high transconductance, an efficient form factor, compatibility with most logic families, and safety features that make it an ideal choice for many applications. As a result, it is no surprise that the EPC2107 is gaining popularity in many sectors of the electronics industry.
The specific data is subject to PDF, and the above content is for reference
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