FDBL0065N40 Discrete Semiconductor Products |
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Allicdata Part #: | FDBL0065N40TR-ND |
Manufacturer Part#: |
FDBL0065N40 |
Price: | $ 1.97 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V 300A H-PSOF8 |
More Detail: | N-Channel 40V 300A (Tc) 429W (Tj) Surface Mount 8-... |
DataSheet: | FDBL0065N40 Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 1.79101 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | 8-PowerSFN |
Supplier Device Package: | 8-PSOF |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 429W (Tj) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 15900pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 296nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 0.65 mOhm @ 80A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 300A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FDBL0065N40 is a type of Field Effect Transistor (FET) commonly used in various electrical engineering applications. It is a single, through-hole device with an N-channel MOSFET structure, making it suitable for many applications such as low noise amplifiers, high switching speed applications, automotive power management, and power supply design. Its features and characteristics include an exceptionally low drain-source on-resistance of 7mΩ, excellent voltage breakdown characteristics, high output current capability of 40A, and an improved junction temperature of 175 °C.
The FDBL0065N40 is a four terminal device consisting of a gate, drain, source, and body. This type of FET is typically used as a voltage controlled switch in which a small control current applied to the gate modulates a larger current between the drain and source. When the gate is connected to ground, the device is in an off-state and the drain-source channel is open preventing any current from flowing between the drain and source. When the gate is connected to a positive voltage, the drain-source channel is closed and current can flow between the drain and source. This mechanism is known as \'enhancement\' as the current increases with increased gate voltage.
The FDBL0065N40 is an efficient and reliable device that can be used in a variety of applications. It provides excellent EMI and RFI suppression capabilities and can be used as a power switch and voltage regulator. In automotive power electronics, it can be used as an amplifier, H-bridge driver, or motor controller. It is also suitable for many digital applications such as Interface Circuits, Logic and Clock Drivers, High-Speed Digital Transmitters, and DSL Line Drivers.
In addition to its many uses in power electronics and digital applications, the FDBL0065N40 is also widely used in RF and Microwave circuit applications. Its low capacitance, low noise performance, and high-speed switching capability make it ideal for Low-Noise Amplifier (LNA) applications, VCOs, charge pumps, and other high-frequency amplifiers.
The FDBL0065N40 is a versatile device that can be used in both analog and digital applications. Its ease of use, wide range of features, and reliability make it an ideal choice for many different applications. The device is widely used in automotive, telecommunication, and industrial power management applications.
In conclusion, the FDBL0065N40 is a type of N-channel MOSFET that is commonly used in various electrical engineering applications. It features an exceptionally low drain-source on-resistance with excellent voltage breakdown capabilities, making it ideal for low noise amplifiers, high switching speed applications, automotive power management, and power supply design. It is a versatile device that can be used for many different applications such as RF and Microwave circuit applications, automotive power electronics, digital circuits, and more.
The specific data is subject to PDF, and the above content is for reference
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