FDBL9403-F085 Allicdata Electronics

FDBL9403-F085 Discrete Semiconductor Products

Allicdata Part #:

FDBL9403-F085TR-ND

Manufacturer Part#:

FDBL9403-F085

Price: $ 1.51
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 40V 240A PSOF8
More Detail: N-Channel 40V 240A (Tc) 357W (Tj) Surface Mount 8-...
DataSheet: FDBL9403-F085 datasheetFDBL9403-F085 Datasheet/PDF
Quantity: 1000
2000 +: $ 1.37320
Stock 1000Can Ship Immediately
$ 1.51
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: 8-PowerSFN
Supplier Device Package: 8-PSOF
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 357W (Tj)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 188nC @ 10V
Series: Automotive, AEC-Q101, PowerTrench®
Rds On (Max) @ Id, Vgs: 0.9 mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The FDBL9403-F085 is a single N-channel Enhancement Mode MOSFET Transistor, available as a surface-mount package. Its low on-state resistance and enhanced performance make it suitable for a range of applications including power switching, load switching, and signal switching. This device can handle a wide range of power levels and provide superior switching speed and efficiency.

At the heart of the device is a single N-channel enhancement mode MOSFET transistor. This type of transistor works by controlling the flow of electrons through a MOSFET channel between source and drain electrodes. The source and drain electrodes act as source and sink of electrons from and to an external circuit respectively. The gate of the MOSFET works as a control electrode and when this gate voltage is set to be higher than the source voltage, the channel is opened and electrons start to flow between the source and drain. Conversely, when the gate voltage is less than the source voltage, the channel is closed and no electrons can flow between the source and drain.

The FDBL9403-F085 has a very low forward capacitance between the gate and drain. This helps to maintain low power losses when the transistor is in an on-state, resulting in higher efficiency. Additionally, the device has a low gate leakage current making it suitable for high-speed application. The low on-state resistance means that it will consume less power when in an on-state. This results in a lower switching power loss and hence improved efficiency.

The FDBL9403-F085 also has an enhanced performance for fast switching. This is because the device has a very low total gate charge, which is the amount of charge needed to switch from an off-state to an on-state. This low total gate charge means that the device can switch very quickly, making it suitable for high-speed switching applications. Additionally, the device has a high breakdown voltage, which is the voltage at which current starts to flow in the reverse direction. This property allows the device to function reliably even when dealing with higher voltages.

The FDBL9403-F085 is a very versatile device and is used in a wide range of applications. Due to its low on-state resistance and fast switching capability it is well suited for use in power switching applications such as power supplies, motor control, or lighting, load switching such as relays, and in digital signal switching, including microcontroller designs. Additionally, it is commonly used for battery switching in portable electronics, such as laptops.

The FDBL9403-F085 makes an ideal MOSFET transistor for a range of applications. Its low on-state resistance, high breakdown voltage and fast switching capability make it suitable for use in a range of power, load and signal switching applications. Moreover, its very low total gate charge means that the device can switch very quickly making it ideal for high-speed applications. Finally, its surface-mount package and wide range of power levels ensures that the device can be used effectively in any application.

The specific data is subject to PDF, and the above content is for reference

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