FDBL0150N80 Discrete Semiconductor Products

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The FDBL0150N80 is a vertical N-channel enhancement-mode insulated gate field effect transistor (IGFET) produced using a high-cell density technology to ensure perform high-power switching applications and low on-state resistance. It is designed for use as a single switch in a wide range of applications. As a member of the FDBL0150 Series, the transistor is capable of switching currents of up to 150 amps and has a maximum voltage rating of 800 volts. It has a maximum operating temperature range of -55 to +125°C.

Application field

The FDBL0150N80 is ideally suited for a wide range of applications, including high-voltage, high-power switching and power control in industrial and automotive systems. The transistor can be used as a single switch in a wide range of applications, such as motor control, HVAC, solar inverters, uninterruptible power, power switching, lighting applications, AV systems and motor control.

Working Principle

The FDBL0150N80 consists of an n-channel IGFET connected in a vertical configuration which is insulated from its source and drain by a silicon oxide layer. The source and drain are connected to the transistor using ohmic contacts, which are the two points of contact at the lower portion of the device. An oxide layer is formed between the channel and the gate, which acts as an insulating layer, preventing electrical current from traveling between the channel and the gate. The gate acts as an electrostatically controlled flat region which blocks or allows current to pass through the channel. When a voltage is applied to the gate, the transistor enters its enhancement mode, allowing current to flow through the device. The transistor can also be used in its depletion mode, in which the transistor is turned off, or slightly conducting, by a negative voltage applied to the gate. This allows the transistor to be used in signal switching applications and for motor control.

The FDBL0150N80 is designed to have low on-state resistance, allowing the transistor to be used efficiently and safely in a variety of high-power switching applications. The transistor has been tested to ensure it is able to withstand high temperature environments and is also ESD compliant, making it an ideal choice for applications that require robustness and reliability.

In conclusion, the FDBL0150N80 is an N-channel IGFET designed for use in a wide range of high-power switching and motor control applications. The device features a vertical design, low on-state resistance, and a maximum voltage rating of 800 volts, making it an ideal choice for a variety of applications.

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