Allicdata Part #: | FDBL86210-F085TR-ND |
Manufacturer Part#: |
FDBL86210-F085 |
Price: | $ 1.63 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 150V 169A PSOF8 |
More Detail: | N-Channel 150V 169A (Tc) 500W (Tj) Surface Mount 8... |
DataSheet: | FDBL86210-F085 Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 1.48257 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | 8-PowerSFN |
Supplier Device Package: | 8-PSOF |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 500W (Tj) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5805pF @ 75V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 90nC @ 10V |
Series: | Automotive, AEC-Q101, PowerTrench® |
Rds On (Max) @ Id, Vgs: | 6.3 mOhm @ 80A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 169A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FDBL86210-F085 is a Specialty Logic Field-Effect Transistor (FET) with advanced features that provide an excellent blend of performance, flexibility and reliability. This transistor is made using the latest Nano-Scale Manufacturing techniques. It is designed for high-reliability applications with stringent on-chip performance requirements.
The FDBL86210-F085 is suitable for applications such as process control, digital logic control, analog logic control, pulse control and interlock controller applications. It is a single, two-terminal, three-pin device that can be used in both single and dual configurations. Its unique design enables it to provide an optimal performance in any environment.
The inner structure of the FDBL86210-F085 consists of two terminals, the source and drain. The drain is connected to an external circuit whereas the source is connected to a gate, which in turn is connected to the external circuit.
The working principle of this device is rooted on the fact that when a voltage is applied to the gate, it creates an electrical field that causes a current to flow between the source and the drain. When the source is negative and the drain is positive, a strong electric field is created in the channel between the source and the drain. The conducting channel between the source and the drain is referred to as an inversion layer.
When this voltage is increased, the electrons which are in the inversion layer are attracted to the gate. This leads to an increase in drain-to-source current. This phenomenon is referred to as the Enhancement Mode. Alternatively, if the voltage is decreased, the electrons in the inversion layer are repelled from the gate, thus reducing the drain-to-source current. This phenomenon is referred to as the Depletion Mode.
The FDBL86210-F085 also contains two additional pins, the enable and sense. The enable pin is used to control the transistor’s ON/OFF state. The enable pin also provides a logic low to enable the device and a logic high to disable it. The sense pin provides a voltage-level sensing capability, allowing the transistor to sense when it should be disabled. In addition, the FDBL86210-F085 contains a number of internal protection devices that make it capable of surviving harsh environmental conditions. These include under-voltage lockout, thermal shutdown and electrostatic discharge protection.
In conclusion, the FDBL86210-F085 is a reliable, high-performance field-effect transistor with advanced features that enable it to provide an excellent blend of performance, flexibility and reliability. The device is suitable for process control, digital logic control, analog logic control, pulse control and interlock controller applications. It utilizes a sourcing and drain-to-source connection for controlling the device’s on/off state and for providing voltage-level sensing. In addition to its internal protection features, the FDBL86210-F085 is also capable of surviving harsh environmental conditions.
The specific data is subject to PDF, and the above content is for reference
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