FDBL0210N80 Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FDBL0210N80 is a depletion-type MOSFET designed for a wide range of applications. It is made from a 23-V drain-to-source breakdown voltage, low-voltage tolerant, planar-type MOSFET. It is made from a new generation of advanced process technology, which makes it highly reliable and provides maximum performance with low power consumption.

The device\'s main feature is that it has a low on-state drain-to-source resistance of 24 milliohms at 4.5V. This is a very important benefit as it allows less power consumption, reduced heat dissipation, and improved device lifetime. Moreover, this device has great thermal stability with its maximum allowable power dissipation of up to 108 W.

FDBL0210N80 is specifically designed for reverse battery protection, electronic ignition, RF switching, motor control, inductive field amplification, and power supply. It is also highly suitable for common-mode noise filtering, DC-DC converters, EMI/RFI control, and power line harmonics suppression applications.

This MOSFET is capable of operating at very high frequencies. It also has a linear current-voltage characteristic for low-frequency operations like switching of polyphase induction motors and other switching power supplies. It is available in the small MSOP-5 surface-mount package.

The FDBL0210N80 MOSFET is an enhancement-type device with a depletion-mode operation. It works by applying a small voltage to the gate that turns the device on. The reason for this is because the applied voltage creates a vertical electric field at the p-n junction of the transistor. This electric field causes a drain-source current, which is commonly referred to as the “channel current”.

The gate-to-source voltage of the device must be higher than a certain “threshold voltage” to turn on the MOSFET. If the gate-to-source voltage is less than this threshold voltage, the channel current will be low, thus preventing current flow and the device will be turned off.

To turn the device back to its off-state, the gate-to-source voltage must be reduced. When done, the channel current will then be reversed and the device will be switched off. As the channel current and the on-state resistance are very lower, the gate-to-source voltage may be lower than the threshold voltage if the device is to turn off.

The FDBL0210N80 MOSFET is a great choice for the applications listed above as it provides excellent performance, low power consumption and improved device lifetime. Its high frequency operation, coupled with its low on-state drain-to-source resistance, can make it a very good choice for digital applications.

The specific data is subject to PDF, and the above content is for reference