FDBL9406-F085

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The FDBL9406-F085 is a high performance, cost-efficient and highly acclaimed N-channel enhancement-mode FET (field-effect transistor) that meets the power requirements of a wide range of commercial and industrial electronics. This specific FET has been specifically designed to reduce dissipation and improve switching speed in a single package. With superior RDS(ON) and performance characteristics, it is ideally suited for use in small signal circuits. The FET can provide excellent switching characteristics and reduced dissipation properties that make it ideal for a variety of switching, load control and sensor applications.The FDBL9406-F085’s most obvious application field is the electronic automation industry where the FET is well-suited for the design of digital (power-controlled) switching and inverter circuits. Additionally, the FET is also used in an increasing number of industrial applications such as motor speed controller systems and for controlling electrical loads, including LED lighting systems.As a transistor, the FDBL9406-F085 is an N-channel enhancement mode FET, which relies on a physical property of semiconductors called conduction bands. When the positive potential in the upper P-type material forms together with the negative potential in the bottom N-type material, we have a conduction band. The electrons within this band drift from the P-type material to the N-type materials and this flow of electrons is referred to as the Drain-Source current.The FDBL9406-F085 has a Gate-Source Voltage (VGS) that acts as a controlling element to adjust the flow of electrons and therefore the current found in the drain-source. When a voltage is applied to the VGS and exceeds a threshold voltage, it switches the FDBL9406-F085 FET off. Conversely, when the VGS is below the threshold voltage, it causes the FET to switch on. In other words, the FET turns on when the voltage at its gate is lower than the voltage at its source.The FDBL9406-F085 has a very low resistance, so the power loss due to voltage drop is very low, giving less power consumption. High-frequency switching is also made possible, as there is no need for inrush current to charge the gate capacitance. Moreover, the FET gate capacitance is reduced as compared to other FETs which make the FET suitable for applications that require high speed switching. Due to its low on-state resistance and low gate capacitance, the FDBL9406-F085 can reduce the power losses during switching and ensures a good signal quality during high speed switching. The FET’s voltage tolerance ranges from -20V to +20V. This makes it possible to use this FET with almost any operation voltage. The on-state resistance of the FDBL9406-F085 is also very low, with RDS(ON) ranging from 30mΩ to 90mΩ, depending on the voltage. This provides for a lower power loss during switching, reducing power dissipation.The FDBL9406-F085 is also suitable for pulse-width modulation applications and can operate up to 5.5GHz. This makes it suitable for high speed switching in RF applications, while still providing a reliable signal quality. The FET also has a wide voltage and temperature range thanks to its deep depletion characteristics. This ensures that it can be used in a wide variety of applications and environments.In summary, the FDBL9406-F085 is an excellent N-channel enhancement-mode field-effect transistor designed to reduce dissipation and provide reliable performance in a single package. It is suitable for a wide range of electronic automation and industrial applications. Its low on-state resistance, wide voltage and temperature range, and high speed switching make it an ideal choice for RF applications and other high performance switching applications.

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