FDBL86062-F085 Allicdata Electronics
Allicdata Part #:

FDBL86062-F085-ND

Manufacturer Part#:

FDBL86062-F085

Price: $ 1.72
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 100V 300A 8-HPSOF
More Detail: N-Channel 100V 300A (Tc) 429W (Tc) Surface Mount 8...
DataSheet: FDBL86062-F085 datasheetFDBL86062-F085 Datasheet/PDF
Quantity: 1000
2000 +: $ 1.54097
Stock 1000Can Ship Immediately
$ 1.72
Specifications
Gate Charge (Qg) (Max) @ Vgs: 124nC @ 10V
Package / Case: 8-PowerSFN
Supplier Device Package: 8-HPSOF
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 429W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6970pF @ 50V
Vgs (Max): ±20V
Series: --
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 2 mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Description

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The FDBL86062-F085 is a series of single low-voltage high-current Field-Effect Transistor (FET), designed specifically for power line applications. It provides superior performance when used in various high-current switching and control applications. The transistor provides excellent power conversion efficiency, excellent linearity, fast switching time, and low on-resistance. It is also designed to utilize the latest CMOS technologies for achieving higher switching frequencies and improved switching accuracy. Furthermore, its robust design ensures long-term reliability and durability.

The FDBL86062-F085 is a dual-gate transistor, with one gate controlling the voltage characteristics, and the other gate controlling the current characteristics. Its architecture is based on the MOSFET technology, and the two gates are connected in series. This series connection of the two gates enables the device to provide high-side current control and low side protection when used in power line applications. With a low on-resistance of 0.1 Ohm, a low gate- threshold voltage of 4.5V and an operating voltage of up to 5V, the FDBL86062-F085 is well-suited for various high-current power management applications.

The working principle of the FDBL86062-F085 is based on the MOSFET technology. When a voltage is applied to the gate of the transistor, a voltage on the substrate is generated. This voltage is then further amplified and applied as a control gate voltage to the gate of the MOSFET, which in turn produces a current path from its drain to its source. The voltage and current intensity of the path is determined by the applied voltage. By connecting two gates in series, the FDBL86062-F085 can better regulate the direction of current flow and thus be more efficient in power management applications.

The FDBL86062-F085 is an ideal choice when used in various high-current switching and power line applications. It features a low on-resistance, excellent linearity, fast switching time, and low gate-threshold voltage. It is also designed with the latest CMOS technologies for improved performance and reliability. Furthermore, its robust design ensures long-term durability and reliability. With its superior performance and features, the FDBL86062-F085 is a great choice for any power line application.

The specific data is subject to PDF, and the above content is for reference

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