FDBL0240N100 Allicdata Electronics

FDBL0240N100 Discrete Semiconductor Products

Allicdata Part #:

FDBL0240N100TR-ND

Manufacturer Part#:

FDBL0240N100

Price: $ 1.73
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 100V 210A POWER56
More Detail: N-Channel 100V 210A (Tc) 3.5W (Ta), 300W (Tc) Surf...
DataSheet: FDBL0240N100 datasheetFDBL0240N100 Datasheet/PDF
Quantity: 1000
2000 +: $ 1.57103
Stock 1000Can Ship Immediately
$ 1.73
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: 8-PowerSFN
Supplier Device Package: 8-PSOF
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 300W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 8755pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 111nC @ 10V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The FDBL0240N100 is a single N-channel enhancement-mode field effect transistor designed for use in low voltage applications such as audio amplifiers, computer CPUs, and digital circuits. This particular device is made by Fairchild Semiconductor and it is part of its FDB family of FETs. FETs (or field effect transistors) are transistors that use an electric field to control the conductivity of a semiconductor material. FETs are commonly used as amplifiers, switches, and voltage regulators.

The FDBL0240N100 is a medium-voltage FET with a maximum continuous drain-source voltage of 200 V, which makes it suitable for use in a wide range of applications. It has an on-resistance of 8.6 ohms and a gate-source threshold voltage of -4.3 V. This means that the device can handle significant amounts of current with low switching losses. In addition, it also has an extremely low output capacitance, which is ideal for use as an audio amplifier.

It is also important to note that, since the device operates in the enhancement-mode, no base voltage is required for the device to operate. This makes the FDBL0240N100 ideal for use in low-voltage circuits such as the ones found in computer CPUs.

The FDBL0240N100 has several uses due to its combination of high current handling capabilities and low on-resistance. It can be used in audio amplifiers, switches, voltage regulators, and even as an on-off switch for digital applications. As the minimum drain-source voltage of the device is only 6 V, it can be used in low-voltage applications as well.

The working principle behind the FDBL0240N100 is simple and straightforward. The device works by using an electric field to control the conductivity of a semiconductor material. When a positive charge is applied to the gate, the transistor will become conducting, allowing current to flow from the drain to the source. When a negative charge is applied to the gate, the transistor will become non-conducting, preventing current from flowing.

It is important to note that the FDBL0240N100 must be used correctly in order to function properly. It is necessary to connect the drain and source correctly, as well as properly setting the gate voltage. If these requirements are met, the device should be able to effectively operate as an amplifier, switch, or voltage regulator.

The FDBL0240N100 is a versatile and reliable FET, making it an ideal choice for use in a variety of applications, from audio amplifiers to computer CPUs. Its low switching losses and extremely low output capacitance make it particularly suited to digital applications. As long as it is correctly connected and used in the appropriate application, the FDBL0240N100 should be able to provide reliable performance for many years.

The specific data is subject to PDF, and the above content is for reference

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