FDBL0110N60 Allicdata Electronics

FDBL0110N60 Discrete Semiconductor Products

Allicdata Part #:

FDBL0110N60TR-ND

Manufacturer Part#:

FDBL0110N60

Price: $ 1.93
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 300A
More Detail: N-Channel 60V 300A (Tc) 429W (Tj) Surface Mount 8-...
DataSheet: FDBL0110N60 datasheetFDBL0110N60 Datasheet/PDF
Quantity: 1000
2000 +: $ 1.74313
Stock 1000Can Ship Immediately
$ 1.93
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: 8-PowerSFN
Supplier Device Package: 8-PSOF
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 429W (Tj)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 13650pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 1.1 mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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A MOSFET (metal-oxide-semiconductor field-effect transistor), also known as FET (field-effect transistor) is a type of transistor used for amplifying or switching electrical signals. The FDBL0110N60 is a MOSFET from Diodes Inc. that is typically used for the switching of data signals in a wide range of circuit applications. The FDBL0110N60 is a general-purpose N-channel MOSFET transistor that can be used as a switch, power amplifier, or low-noise amplifier.

MOSFET transistors are three-terminal devices that are used to control the flow of current in an electronic circuit. The FDBL0110N60 is composed of three terminals: a source, a gate and a drain. The source terminal is the negative terminal, while the gate and the drain terminals are both positive. These three terminals are connected by a thin metal oxide layer, which acts as a gate or an insulating barrier between the two terminals. To allow current to flow through the transistor, the gate terminal must be energized.

The FDBL0110N60 has an extremely low on-resistance of just 0.009 Ohms. This low on-resistance allows for high speed switching with minimal power loss. This makes the FDBL0110N60 an ideal choice for switching high-frequency, low-current signals. It also has a breakdown voltage of 500 Volts and a maximum drain-to-source voltage of 700 Volts.

The FDBL0110N60 MOSFET transistor is primarily used in switch mode power supplies, such as those found in computers and other electronic devices. In this type of power supply, the MOSFET is used as a low-power switch, allowing the power supply to switch power at high speed with minimal power loss. It is also used as a low-noise amplifier and in various other types of circuits, such as audio power amplifiers and voltage regulators. The low on-resistance of the FDBL0110N60 makes it an ideal choice for these types of applications.

The FDBL0110N60 MOSFET transistor is an excellent choice for a variety of circuit applications. Its low on-resistance, high breakdown voltage and high drain-to-source voltage make it ideal for high-speed switching applications. It is also a great choice for use as a low-noise amplifier or as a voltage regulator. With its excellent performance characteristics and versatility, the FDBL0110N60 is a popular choice for many circuit applications.

The specific data is subject to PDF, and the above content is for reference

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