Allicdata Part #: | FDBL0200N100OSTR-ND |
Manufacturer Part#: |
FDBL0200N100 |
Price: | $ 2.30 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 300A 8-HPSOF |
More Detail: | N-Channel 100V 300A (Tc) 429W (Tc) Surface Mount 8... |
DataSheet: | FDBL0200N100 Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 2.08953 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | 8-PowerSFN |
Supplier Device Package: | 8-HPSOF |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 429W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 9760pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 133nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 2 mOhm @ 80A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 300A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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Introduction to FDBL0200N100 Application Field and Working Principle
The FDBL0200N100 is a surface mounted, field functional transistor. It is a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) designed for use in high frequency, low power applications. The FDBL0200N100 is usually used as a switching and output device in a variety of applications, including motor drives and automobile electronics.
What is a Metal Oxide Semiconductor Field Effect Transistor (MOSFET)?
A MOSFET is a type of transistor that uses a gate to control the current flow between the source and the drain within the device. The gate acts like a switch, which opens and closes depending on the voltage applied. It is a type of "field effect" transistor, meaning that its conduction is a result of a field generated at the gate.
MOSFETs are used in a wide range of applications, including digital logic circuitry and switching power converters. They offer several advantages over other types of transistors, such as low power consumption, fast switching speeds and low voltage requirements.
How does the FDBL0200N100 MOSFET Work?
The FDBL0200N100 MOSFET utilizes a vertical, planar structure for its design. This structure allows for a reduced parasitic capacitance and improved lithographic resolution, allowing for higher operating frequencies and higher performance. The device is designed to operate in both depletion and enhancement modes.
In depletion mode, the gate voltage is less than the source voltage. This causes the drain terminal of the MOSFET to become more negative than the source, which in turn increases the device\'s resistance, preventing current flow. In enhancement mode, the gate voltage is higher than the source voltage, resulting in the drain terminal becoming more positive than the source. This increases the device\'s conductivity, allowing current to flow.
The current flow is regulated by the gate voltage, which can be varied depending on the application. Higher gate voltages are used to increase the current flow, while lower gate voltages decrease the current flow.
Benefits of the FDBL0200N100
The FDBL0200N100 has several benefits that make it useful for a wide range of applications. Its vertical, planar design allows for improved lithographic resolution, allowing for higher operating frequencies and improved performance. It also utilizes a low-resistance package material, which leads to improved energy efficiency.
The device features an optimized electromechanical performance, designed to perform well in harsh environments, such as automotive applications. It also has low on-resistance, making it ideal for high-current applications. Lastly, the device is capable of operating at frequencies up to 25 MHz.
Applications of the FDBL0200N100
The FDBL0200N100 is suitable for a wide range of applications, including motor drives, automobile electronics and digital logic circuits. It can be used as a switch or output device, and is ideal for high-frequency, low-power applications. The device is also suitable for automotive, industrial, and medical applications.
Conclusion
The FDBL0200N100 is a surface-mount MOSFET designed for use in high-frequency, low-power applications. It features a vertical, planar structure, designed to optimize its performance in harsh environments. The device has a low-resistance package material, making it ideal for high-current applications. Additionally, the device has low on-resistance and can be operated at frequencies up to 25 MHz. The FDBL0200N100 is suitable for motor drives, automobile electronics, digital logic circuitry and other applications.
The specific data is subject to PDF, and the above content is for reference
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