Allicdata Part #: | FDBL86066-F085OSTR-ND |
Manufacturer Part#: |
FDBL86066-F085 |
Price: | $ 1.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | PTNG 100V N-FET TOLL |
More Detail: | N-Channel 100V 185A (Tc) 300W (Ta) Surface Mount 8... |
DataSheet: | FDBL86066-F085 Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 0.98594 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | 8-PowerSFN |
Supplier Device Package: | 8-HPSOF |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 300W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3240pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 69nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 4.1 mOhm @ 80A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 185A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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FDBL86066-F085 is a field-effect transistor (FET) which employs the metal-oxide semiconductor (MOS) construction scheme. It is a single transistor and has an operating temperature range of -55 to +125 degree Celsius. The device offers high input impedance, low noise operation, and low power consumption.
The substrate is usually silicon-doped and is the layer between the source, gate, and drain for strong electrical conductivity. The transistor is designed with a gate that is insulated from the other two terminals (source and drain). A voltage applied between the gate and the source allows current to flow between the drain and the source, thus controlling the current flow. The transistor provides very high input impedance and is suitable for applications that require low power operation.
The unique feature of the FDBL86066-F085 is its very low on-state resistance. This low resistance is achieved by using a p-channel enhancement-mode MOSFET. At the same time, it offers high off-state channel resistance. This combination makes it an ideal choice for low voltage, low current applications.
The working principle of the FDBL86066-F085 device is quite simple. When a voltage is applied between the gate and the source, it controls the flow of current from the drain to the source. This creates a pull-up action in the channel, increasing the current. As the voltage is increased, the current increases. At the same time, the off-state resistance of the device increases, allowing for improved noise suppression.
The FDBL86066-F085 has many applications in the electronics industry. It is typically used in low voltage switching applications such as digital logic circuits, clock generators, and various other low current devices. Additionally, it can be used in power supply design as a switching device, as well as in automotive and telecommunications systems.
The FDBL86066-F085 is a low power, high performance MOSFET. It offers a combination of high input impedance and low noise operation making it suitable for a variety of applications. Its low on-state resistance and high off-state resistance provide superior protection in applications requiring low voltage and low current. With its wide operating temperature range, the FDBL86066-F085 offers reliable performance in even the most challenging environments.
The specific data is subject to PDF, and the above content is for reference
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