FDBL0260N100 Discrete Semiconductor Products |
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Allicdata Part #: | FDBL0260N100TR-ND |
Manufacturer Part#: |
FDBL0260N100 |
Price: | $ 2.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 200A 8PSOF |
More Detail: | N-Channel 100V 200A (Tc) 3.5W (Ta), 250W (Tc) Surf... |
DataSheet: | FDBL0260N100 Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 1.80354 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | 8-PowerSFN |
Supplier Device Package: | 8-PSOF |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.5W (Ta), 250W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 9265pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 116nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 2.6 mOhm @ 80A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 200A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FDBL0260N100 is a highly integrated field effect transistor (FET) that is designed for low noise, high frequency applications such as radio receivers and transmitters, audio amplifiers and active filters. It is a single-junction, depletion mode FET with an integrated bypass switch. The FDBL0260N100 is capable of providing up to 30 dB of gain and has an excellent noise figure. The device is also very efficient and provides low power consumption.
The FDBL0260N100 has a high-temperature, high-performance depletion mode process that enables it to support high RF frequency operation. This helps to improve the noise figure of the device and make it suitable for a wide range of applications. The integrated switch also helps to reduce power consumption and improve the efficiency of the device. The FDBL0260N100 can be used in applications such as high-frequency receivers, transmitters, amplifiers, active filters, and signal processors.
The working principle of the FDBL0260N100 is based on the principles of field effect transistor (FET) operation. A FET is a type of transistor that utilizes the electric field created by an electric charge in order to control the flow of current. In a typical FET, a connection between the gate and the source creates an electric field. This field polarizes the transistor and creates an inversion layer that can be used to control the current through the transistor.
The FDBL0260N100 utilizes this basic principle in order to provide low noise, high frequency performance. The integrated bypass switch allows the device to be turned on and off quickly, providing the desired amount of gain. The high-temperature, high-performance process also helps to improve the performance of the device while keeping power consumption low.
The FDBL0260N100 is a single-junction depletion mode FET that is designed for a variety of applications. The device is capable of providing up to 30 dB of gain and is suitable for use in applications such as radio receivers, transmitters, audio amplifiers, active filters, and signal processors. The high-temperature, high-performance depletion mode process of the device provides low noise, high frequency operation and improved efficiency.
The specific data is subject to PDF, and the above content is for reference
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