
Allicdata Part #: | FDMS7670ASFSTR-ND |
Manufacturer Part#: |
FDMS7670AS |
Price: | $ 0.40 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V SYNCFET POWER56 |
More Detail: | N-Channel 30V 22A (Ta), 42A (Tc) 2.5W (Ta), 65W (T... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.40000 |
10 +: | $ 0.38800 |
100 +: | $ 0.38000 |
1000 +: | $ 0.37200 |
10000 +: | $ 0.36000 |
Vgs(th) (Max) @ Id: | 3V @ 1mA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 8-PQFN (5x6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 65W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4225pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 66nC @ 10V |
Series: | PowerTrench®, SyncFET™ |
Rds On (Max) @ Id, Vgs: | 3 mOhm @ 21A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 22A (Ta), 42A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FDMS7670AS is a modern device used in the production of power transistors. It is a single transverse field effect transistor (FET) designed specifically for high current applications.
The device is designed to be robust, efficient and reliable by providing superior current handling capability with low saturation voltage and low ON resistance. As such, it is highly effective and efficient in a variety of power applications. The device is particularly suited to high-current switching applications such as automotive, industrial and communication circuits.
The FDMS7670AS is a single N-channel transverse field effect transistor whose two terminals are the source and drain. Its gate, which is isolated from the source and drain, is used to control the current between the source and drain. This gate is insulated from the source and drain by an insulating layer, which is why it is able to function properly and provide superior current handling.
The device operates by creating a depletion region in the underlying substrate. This region widens and narrows depending on the gate voltage applied at the gate. When a voltage is applied at the gate, the underlying substrate is negatively charged and the depletion region widens, thus allowing a greater current from source to drain. Conversely, when the voltage applied at the gate is negative, the depletion region narrows and the current is decreased.
The FDMS7670AS has a variety of features that make it an ideal device for high current applications. First, its wide operating temperature range of -40 to +150 ºC allows for a variety of usage conditions. It also has a maximum drain current of 120 A and a drain source voltage of 500 V, which allows for a high current flow with low saturation voltage. The device also has a low total gate charge of 18 nC, which is significantly lower than many competing devices and helps reduce switching losses. Additionally, its fast turn-off time allows for quick shutdown of the device, which can help reduce switching losses and improve efficiency.
The FDMS7670AS is an excellent choice for high current applications or circuits that require low switching losses. Its wide temperature range, high current handling capacity, low saturation voltage and low total gate charge make it an ideal transistor for many applications. It can be used in automotive, industrial and communication circuits, and it is also suitable for high performance data communications.
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