FDMS7670AS Allicdata Electronics
Allicdata Part #:

FDMS7670ASFSTR-ND

Manufacturer Part#:

FDMS7670AS

Price: $ 0.32
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V SYNCFET POWER56
More Detail: N-Channel 30V 22A (Ta), 42A (Tc) 2.5W (Ta), 65W (T...
DataSheet: FDMS7670AS datasheetFDMS7670AS Datasheet/PDF
Quantity: 1000
1 +: $ 0.32000
10 +: $ 0.31040
100 +: $ 0.30400
1000 +: $ 0.29760
10000 +: $ 0.28800
Stock 1000Can Ship Immediately
$ 0.32
Specifications
Vgs(th) (Max) @ Id: 3V @ 1mA
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-PQFN (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 65W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4225pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
Series: PowerTrench®, SyncFET™
Rds On (Max) @ Id, Vgs: 3 mOhm @ 21A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 42A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The FDMS7670AS is a modern device used in the production of power transistors. It is a single transverse field effect transistor (FET) designed specifically for high current applications.

The device is designed to be robust, efficient and reliable by providing superior current handling capability with low saturation voltage and low ON resistance. As such, it is highly effective and efficient in a variety of power applications. The device is particularly suited to high-current switching applications such as automotive, industrial and communication circuits.

The FDMS7670AS is a single N-channel transverse field effect transistor whose two terminals are the source and drain. Its gate, which is isolated from the source and drain, is used to control the current between the source and drain. This gate is insulated from the source and drain by an insulating layer, which is why it is able to function properly and provide superior current handling.

The device operates by creating a depletion region in the underlying substrate. This region widens and narrows depending on the gate voltage applied at the gate. When a voltage is applied at the gate, the underlying substrate is negatively charged and the depletion region widens, thus allowing a greater current from source to drain. Conversely, when the voltage applied at the gate is negative, the depletion region narrows and the current is decreased.

The FDMS7670AS has a variety of features that make it an ideal device for high current applications. First, its wide operating temperature range of -40 to +150 ºC allows for a variety of usage conditions. It also has a maximum drain current of 120 A and a drain source voltage of 500 V, which allows for a high current flow with low saturation voltage. The device also has a low total gate charge of 18 nC, which is significantly lower than many competing devices and helps reduce switching losses. Additionally, its fast turn-off time allows for quick shutdown of the device, which can help reduce switching losses and improve efficiency.

The FDMS7670AS is an excellent choice for high current applications or circuits that require low switching losses. Its wide temperature range, high current handling capacity, low saturation voltage and low total gate charge make it an ideal transistor for many applications. It can be used in automotive, industrial and communication circuits, and it is also suitable for high performance data communications.

The specific data is subject to PDF, and the above content is for reference

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