| Allicdata Part #: | FDMS7670ASFSTR-ND |
| Manufacturer Part#: |
FDMS7670AS |
| Price: | $ 0.32 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 30V SYNCFET POWER56 |
| More Detail: | N-Channel 30V 22A (Ta), 42A (Tc) 2.5W (Ta), 65W (T... |
| DataSheet: | FDMS7670AS Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.32000 |
| 10 +: | $ 0.31040 |
| 100 +: | $ 0.30400 |
| 1000 +: | $ 0.29760 |
| 10000 +: | $ 0.28800 |
| Vgs(th) (Max) @ Id: | 3V @ 1mA |
| Package / Case: | 8-PowerTDFN |
| Supplier Device Package: | 8-PQFN (5x6) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta), 65W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 4225pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 66nC @ 10V |
| Series: | PowerTrench®, SyncFET™ |
| Rds On (Max) @ Id, Vgs: | 3 mOhm @ 21A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 22A (Ta), 42A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FDMS7670AS is a modern device used in the production of power transistors. It is a single transverse field effect transistor (FET) designed specifically for high current applications.
The device is designed to be robust, efficient and reliable by providing superior current handling capability with low saturation voltage and low ON resistance. As such, it is highly effective and efficient in a variety of power applications. The device is particularly suited to high-current switching applications such as automotive, industrial and communication circuits.
The FDMS7670AS is a single N-channel transverse field effect transistor whose two terminals are the source and drain. Its gate, which is isolated from the source and drain, is used to control the current between the source and drain. This gate is insulated from the source and drain by an insulating layer, which is why it is able to function properly and provide superior current handling.
The device operates by creating a depletion region in the underlying substrate. This region widens and narrows depending on the gate voltage applied at the gate. When a voltage is applied at the gate, the underlying substrate is negatively charged and the depletion region widens, thus allowing a greater current from source to drain. Conversely, when the voltage applied at the gate is negative, the depletion region narrows and the current is decreased.
The FDMS7670AS has a variety of features that make it an ideal device for high current applications. First, its wide operating temperature range of -40 to +150 ºC allows for a variety of usage conditions. It also has a maximum drain current of 120 A and a drain source voltage of 500 V, which allows for a high current flow with low saturation voltage. The device also has a low total gate charge of 18 nC, which is significantly lower than many competing devices and helps reduce switching losses. Additionally, its fast turn-off time allows for quick shutdown of the device, which can help reduce switching losses and improve efficiency.
The FDMS7670AS is an excellent choice for high current applications or circuits that require low switching losses. Its wide temperature range, high current handling capacity, low saturation voltage and low total gate charge make it an ideal transistor for many applications. It can be used in automotive, industrial and communication circuits, and it is also suitable for high performance data communications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| FDMS9620S | ON Semicondu... | -- | 9000 | MOSFET 2N-CH 30V 7.5A/10A... |
| FDMS9410L-F085 | ON Semicondu... | 0.4 $ | 1000 | MOSFET N-CH 40V 50A POWER... |
| FDMS86540 | ON Semicondu... | -- | 1000 | MOSFET N-CH 60V 20A 8-PQF... |
| FDMS3602AS | ON Semicondu... | -- | 1000 | MOSFET 2N-CH 25V 15A/26A ... |
| FDMS86250 | ON Semicondu... | -- | 3000 | MOSFET N-CH 150V 6.7A 8-P... |
| FDMS4435BZ | ON Semicondu... | -- | 3000 | MOSFET P-CH 30V 9A POWER5... |
| FDMS8888 | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 13.5A 8-P... |
| FDMS0309AS | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 21A PT8N-... |
| FDMS0348 | ON Semicondu... | 0.0 $ | 1000 | INTEGRATED CIRCUIT |
| FDMS8018 | ON Semicondu... | -- | 15000 | MOSFET N-CH 30V 30A 8PQFN... |
| FDMS2734 | ON Semicondu... | -- | 1000 | MOSFET N-CH 250V 2.8A POW... |
| FDMS10C4D2N | ON Semicondu... | -- | 1000 | MOSFET N-CH 100V 17A 8PQF... |
| FDMS8690 | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 14A POWER... |
| FDMS7670AS | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V SYNCFET P... |
| FDMS7656AS | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V POWER56N-... |
| FDMS0309AS_SN00347 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CHN-Channel 30V ... |
| FDMS039N08B | ON Semicondu... | -- | 1000 | MOSFET N-CH 80V 19.4A POW... |
| FDMS7650 | ON Semicondu... | -- | 3000 | MOSFET N-CH 30V POWER56N-... |
| FDMS8570S | ON Semicondu... | 0.42 $ | 1000 | MOSFET N-CH 25V 24A 8-PQF... |
| FDMS0312AS | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 18A PT8N-... |
| FDMS0346 | ON Semicondu... | -- | 1000 | INTEGRATED CIRCUIT |
| FDMS9410-F085 | ON Semicondu... | 0.39 $ | 1000 | MOSFET N-CH 40V 50A 8PQFN... |
| FDMS7620S | ON Semicondu... | -- | 1000 | MOSFET 2N-CH 30V POWER56M... |
| FDMS86569-F085 | ON Semicondu... | 0.43 $ | 1000 | MOSFET N-CH 60V 65A POWER... |
| FDMS3660AS | ON Semicondu... | -- | 1000 | MOSFET 2N-CH 30V 13A/30A ... |
| FDMS8020 | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 26A 8-PQF... |
| FDMS86322 | ON Semicondu... | -- | 1000 | MOSFET N-CH 80V 60A LL PO... |
| FDMS86300 | ON Semicondu... | -- | 15000 | MOSFET N-CH 80V 19A POWER... |
| FDMS0302S | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 29AN-Chan... |
| FDMS2572 | ON Semicondu... | -- | 1000 | MOSFET N-CH 150V 4.5A POW... |
| FDMS86252 | ON Semicondu... | -- | 1000 | MOSFET N-CH 150V 16A POWE... |
| FDMS7621S | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH |
| FDMS2510SDC | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 25V 28A POWER... |
| FDMS8672AS | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 18A POWER... |
| FDMS86200DC | ON Semicondu... | -- | 1000 | MOSFET N-CH 150V 9.3A POW... |
| FDMS3006SDC | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 34A 8-PQF... |
| FDMS7694 | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V POWER56N-... |
| FDMS3620S | ON Semicondu... | -- | 1000 | MOSFET 2N-CH 25V 17.5A/38... |
| FDMS86350ET80 | ON Semicondu... | -- | 1000 | MOSFET N-CH 80V 80A POWER... |
| FDMS9409L-F085 | ON Semicondu... | 0.5 $ | 1000 | NMOS PWR56 40V 2.8 MOHMN-... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...
FDMS7670AS Datasheet/PDF