FDN302P Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	1.5V @ 250µA
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SuperSOT-3
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	500mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	882pF @ 10V
Vgs (Max):	±12V
Gate Charge (Qg) (Max) @ Vgs:	14nC @ 4.5V
Series:	PowerTrench®
Rds On (Max) @ Id, Vgs:	55 mOhm @ 2.4A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	2.4A (Ta)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Cut Tape (CT)

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The FDN302P is a well-known field effect transistor (FET) that is primarily used as a switching device. It has a wide range of applications, making it popular among many device manufacturers. In this article, we will provide an overview of the FDN302P’s working principle and its applications.The FDN302P utilizes a junction field-effect transistor (JFET) design. This particular design is known for its low on-state resistance while also providing exceptional reliability. The device is typically composed of three terminals, which include the source, gate, and drain. The source terminal is the input of the transistor, while the gate and drain are used to control the output voltage.When no voltage is applied to the gate terminal, the device is in its off-state. This means that very little current will flow from the source to the drain. However, when a small voltage is applied to the gate terminal, this creates a bias voltage between the gate and the source. This causes the device to enter into its on-state, allowing current to flow between the source and drain.Due to the FDN302P’s exceptional reliability and low-power consumption, it is used in a wide range of applications. It is often used in automotive electronics, as well as industrial automation and control systems. Other applications include power supply regulation and electronic power conversion. Additionally, the device is suitable for use in harsh environments, making it a popular choice for telecommunication systems, radar systems, and satellite ground stations.Additionally, the FDN302P utilizes a depletion-mode design. This means that the device is normally off, and the gate terminal must be driven in the positive direction to ensure current flow through the drain. Conversely, if the gate terminal is driven in the negative direction, the device enters into its off-state. In this mode, the device will become non-conductive with very little applied voltage.Overall, the FDN302P is an ideal choice for many different applications. Its low-power consumption and exceptional reliability make it a popular choice for various automotive, industrial, and medical applications. Additionally, its depletion-mode design ensures that the device is normally in its off-state, allowing for both cost and power efficiency.

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