FDN337N Allicdata Electronics
Allicdata Part #:

FDN337NTR-ND

Manufacturer Part#:

FDN337N

Price: $ 0.09
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 2.2A SSOT3
More Detail: N-Channel 30V 2.2A (Ta) 500mW (Ta) Surface Mount S...
DataSheet: FDN337N datasheetFDN337N Datasheet/PDF
Quantity: 561000
1 +: $ 0.08800
10 +: $ 0.08536
100 +: $ 0.08360
1000 +: $ 0.08184
10000 +: $ 0.07920
Stock 561000Can Ship Immediately
$ 0.09
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SuperSOT-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 500mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 65 mOhm @ 2.2A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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An FDN337N is a single-gate enhancement mode field-effect transistor (FET). FETs are transistors that rely on an electric field to control their output characteristics. The FDN337N is an N-channel MOSFET, that is, the current is controlled by the electric field between an insulated gate and the n-type source and drain regions. This FET can handle relatively high wattages, making it suitable for a variety of switching and amplification applications.

The FDN337N is designed for power supply applications, particularly those that require switching control. It is designed to operate in a range of voltages (9.00 V to 30 V) and current (1.00 A to 20.0 A). Because of its high breakdown voltage and low on state resistance, it is well suited for applications with high power needs. You can use the FDN337N in a variety of circuits, such as audio amplifiers, voltage regulators, DC supplies, and even motor control applications.

The working of the FDN337N is relatively simple. When no voltage is applied to the gate, the FET is “off”, and no current is allowed to pass through. When a voltage is applied to the gate, the FET is “on”, and current flows from the source to the drain. This is known as the “on” state of the FET and is typically referred to as a “semi-conduction state” as it is somewhere between being completely “on” and “off”. The amount of current that can flow through the FET is largely determined by the voltage applied to the gate and by the FET’s inherent resistance.

The FDN337N is an ideal choice for a variety of applications due to its wide range of current capability, relatively low on-state resistance, and high breakdown voltage. It can withstand up to 50V, providing excellent performance and reliability with high power applications. Furthermore, the on-state resistance of the FDN337N is low, meaning that it can quickly switch states without creating major losses in power.

The FDN337N is a reliable and efficient FET for a variety of power supply applications, including motor control, amplifiers, and power regulators. The FET has a wide range of current capability and low on-state resistance, allowing it to quickly switch states and provide reliable performance and efficiency. With its high breakdown voltage and low gate-source voltage, the FDN337N is a versatile and reliable choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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