FDN357N Discrete Semiconductor Products

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1. Description

SuperSOTTM-3 N-Channel logic level enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package

2. Features

    1. 1.9 A, 30 V, RDS(ON) = 0.090 W @ VGS = 4.5 V

                           RDS(ON) = 0.060 W @ VGS = 10 V.

    2. Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities.

    3. High density cell design for extremely low RDS(ON).

    4. Exceptional on-resistance and maximum DC current capability.

3. Electrical Characteristics