FDN304P Discrete Semiconductor Products

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FDN304P is an enhancement-mode MOSFET that can be used both as a directly driven load switch and as an active component in many commonly used applications. The different component designs and various technologies used to manufacture FDN304P enable unique features such as low on-state resistance and high-speed switching. Furthermore, the FDN304P can operate from very low voltage ranges and can be easily incorporated into applications that require very low power.

Application Field

The FDN304P has several typical applications related to the power conversion and management, as many as power switches, contactors, relays, motor drives, and other similar systems. In addition, the device is highly suitable for use in new applications due to its power device switching abilities being particularly ideal for DC-DC conversion, battery pack protection, and the interfacing of high current devices.

Low on-state resistance of FDN304P makes the device efficient when used in power line applications and is also ideal for use in small battery-operated applications that require very low power. In addition to its low on-state resistance, the device has good immunity from EMC disturbances, making it suitable for automotive environments.

The FDN304P MOSFET is also suitable for modern application that require high-speed switching. With a fast rise and fall time and a low input capacitance, this device also enables efficient data controlling of systems. Furthermore, its high drain-source voltage rating makes it appropriate for efficient ESD protection of electronic systems.

Working Principle

An FDN304P MOSFET operates in the enhancement-mode when there is no bias applied to the Gate-Source junction. This means that there is virtually no current flowing through the Gate-Source junction, so the device acts like an open switch. In this state, the main parameters to consider are the Drain-Source On-state resistance (RDSon) and the maximum Drain-Source voltage rating (Vds).

When a positive Gate-Source bias is applied (Vg > Vth), this current creates an electric field that penetrates the Vishay Oxide layer and increases in a linear fashion (according to Rds) as the Gate-Source voltage is increased. This increase in electron density reduces the resistance between the drain and source of the MOSFET and so, when the Gate-Source voltage is increased above Vth and above the drain-source voltage Vds, then a conducting channel is formed and current flows from the drain to the source of the device.

This conducting channel is maintained as long as the current between the drain and the source is sufficient to sustain the enhancement-mode of operation. If the current drops below the required level, then the drain-source voltage rises, and a so-called Nonzero-bias snapback occurs, wherein the device turns off. This is beneficial in applications such as electrostatic discharge, due to its fast switching times.

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