FDN327N Discrete Semiconductor Products |
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| Allicdata Part #: | FDN327NTR-ND |
| Manufacturer Part#: |
FDN327N |
| Price: | $ 0.10 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 20V 2A SSOT-3 |
| More Detail: | N-Channel 20V 2A (Ta) 500mW (Ta) Surface Mount Sup... |
| DataSheet: | FDN327N Datasheet/PDF |
| Quantity: | 6000 |
| 1 +: | $ 0.10000 |
| 10 +: | $ 0.09700 |
| 100 +: | $ 0.09500 |
| 1000 +: | $ 0.09300 |
| 10000 +: | $ 0.09000 |
| Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | SuperSOT-3 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 500mW (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 423pF @ 10V |
| Vgs (Max): | ±8V |
| Gate Charge (Qg) (Max) @ Vgs: | 6.3nC @ 4.5V |
| Series: | PowerTrench® |
| Rds On (Max) @ Id, Vgs: | 70 mOhm @ 2A, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 2A (Ta) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The FDN327N is a type of field-effect transistor (FET). FETs are semiconductor devices used as amplifiers and switches in electronic equipment, making them versatile and widely used components in the electronic industry. The FDN327N is a single MOSFET device; this type of FET is typically used for analog or mixed-signal switching and amplifying applications in digital systems.
The FDN327N is able to switch and amplify signals quickly, thanks to its fast switching speeds and low on-resistance. This makes it suitable for use in high-speed circuits, such as those found in consumer electronics, telecommunications, and industrial automation. It is also more power efficient than other types of FETs, allowing for greater power savings. The FDN327N also features a low input capacitance, reducing switching times and increasing signal interference immunity.
The FDN327N works by controlling the current flow through a channel between the source and drain. When voltage is applied to the gate terminal, electrons within the channel region are attracted to the gate and thus a conducting channel of electrons is created between the source and drain. This provides the device with its switching capabilities - the current through the channel can be altered by adjusting the gate voltage.
The FDN327N is also capable of amplifying signals. The device has an input resistance, which creates an input voltage divider between the input and output. This voltage divider creates a gain in the signal, as the output voltage is greater than the input voltage. The FDN327N is able to provide a gain of up to 220 times, depending on the setup of the circuit.
The FDN327N is a popular device, due to its versatile switching and amplifying capabilities and its high power efficiency. It is suitable for a variety of applications, including digital logic circuitry and audio amplifiers, as well as high-speed, power-sensitive circuits. The device is also often used for hot-swappable power rails, as its low on-resistance allows it to quickly switch high currents on and off.
The specific data is subject to PDF, and the above content is for reference
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FDN327N Datasheet/PDF