FDN372S Allicdata Electronics
Allicdata Part #:

FDN372S-ND

Manufacturer Part#:

FDN372S

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 2.6A SSOT-3
More Detail: N-Channel 30V 2.6A (Ta) 500mW (Ta) Surface Mount S...
DataSheet: FDN372S datasheetFDN372S Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 1mA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SuperSOT-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 500mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 15V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 5V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 40 mOhm @ 2.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The FDN372S is a single n-channel MOSFET known for its moderate drain-source avalanche voltage, high gain and low switch threshold. The device contains an advanced-structure lateral diffusion MOSFET (LDMOS) transistor. It is designed to provide customers with an easy-to-use, highly reliable and cost-effective MOSFET solution.

The FDN372S is particularly well-suited for use in a wide variety of applications, including power switches, motor control, and DC/DC converters. The device is also suitable for operating in the 20-50 V supply range. The FDN372S supports up to +100°C junction temperature, making it suitable for use in harsh environments.

The key feature of the FDN372S is its wide operational range. At the lower end of its operational range, the device has a drain-source breakdown voltage (V BRDSS ) of 30V. As the gate voltage approaches 30V, the device passes from Vth to V GS = Vth +ΔVth and enters saturation. At the higher end of its operational range, the FDN372S has a maximum drain-source voltage of 200V. In addition to its wide supply range, the device can handle up to 8W peak power dissipation at a junction temperature of +150 °C.

The FDN372S works in the enhancement mode and is activated by the gate voltage. When a positive voltage is applied to the gate terminal, electrons are attracted to the gate, resulting in a higher concentration of electrons near the channel. This creates a conductive channel between source and drain and current can flow through the device. This mode of operation is also known as “enhanced” or “depletion” mode, depending on the type of MOSFET.

The FDN372S is able to withstand a moderate drain-source avalanche voltage of 30V but for higher voltages, an external series diode is recommended for protection. It also has a maximum gate leakage current of 10 μA at 25°C. In addition, the device can operate at a low threshold voltage of 0.8 V and with a low on-state resistance of 0.02 Ω. All these features make it well-suited to a wide range of applications.

The FDN372S provides customers with a cost-effective and highly reliable solution with a wide operating range and moderate avalanche voltage. Its low switch threshold, high gain and low on-state resistance make it suitable for a wide range of power switching applications, including motor control and DC/DC converters. Furthermore, its high thermal stability in harsh environments make it suitable for outdoor and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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