
Allicdata Part #: | FDN358PTR-ND |
Manufacturer Part#: |
FDN358P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 30V 1.5A SSOT3 |
More Detail: | P-Channel 30V 1.5A (Ta) 500mW (Ta) Surface Mount S... |
DataSheet: | ![]() |
Quantity: | 30000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SuperSOT-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 500mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 182pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 5.6nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 125 mOhm @ 1.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.5A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FDN358P is a silicon N-channel FET that is used in a wide variety of electronic applications. It has a low power consumption, a fast switching time, and an extremely low on-resistance. The FDN358P is a part of a number of different families of FETs, including metal oxide semiconductor (MOSFETs), solid state relays (SSRs), and metal-oxide-semiconductor field-effect transistors (MOSFETs). The FDN358P is especially suited for use in switching applications, due to its low on-resistance, fast switching rate, and low power consumption.
The FDN358P is a single-gate device, which means that there is only one input (gate) to the device, and the output of the device is determined by the voltage applied to that input. The FET is a type of insulated-gate transistor, which means that the gate (input) terminal is insulated from the drain and source terminals, thus enabling a higher input impedance that can prevent the flow of current through the gate. The FDN358P also has built in protection against transient overvoltage conditions, which means that it can be used in applications where voltage transients may be present.
The FDN358P is used in a wide variety of electronic designs, including switching applications, power management, amplifier and signal conditioning circuits, and rectifier controllers. As mentioned, the FET has a low on-resistance, which means that it can be used to reduce the flow of current through the circuit. This makes it ideal for use in high power applications, since the device can switch large currents without consuming too much power. It also has a fast switching speed, which enables it to be used in applications where fast switching is required.
The FDN358P is also used in amplifier and signal conditioning circuits. The gate terminal can be connected to a signal, such as a microphone or a device that produces sound. The output of the device can then be used to amplify or condition the signal, or to power a speaker. The device is also suitable for use as a rectifier controller, where it can be used to regulate the output voltage of a power supply.
The FDN358P is a versatile device with a wide range of applications. It is useful in switching, power management, signal conditioning, and rectifier control applications. Its low on-resistance, fast switching speed, and built in protection against transients makes it an excellent choice for a wide range of applications. The device is reliable, robust, and easy to use, making it a popular choice for many types of electronic designs.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
FDN358P | ON Semicondu... | -- | 30000 | MOSFET P-CH 30V 1.5A SSOT... |
FDN302P | ON Semicondu... | -- | 61288 | MOSFET P-CH 20V 2.4A SSOT... |
FDN359AN | ON Semicondu... | -- | 57000 | MOSFET N-CH 30V 2.7A SSOT... |
FDN359BN | ON Semicondu... | -- | 6000 | MOSFET N-CH 30V 2.7A SSOT... |
FDN336P-NL | ON Semicondu... | -- | 1000 | MOSFET P-CH 20V 1.3A SSOT... |
FDN357N | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 1.9A SSOT... |
FDN306P | ON Semicondu... | -- | 54000 | MOSFET P-CH 12V 2.6A SSOT... |
FDN340P | ON Semicondu... | -- | 6000 | MOSFET P-CH 20V 2A SSOT3P... |
FDN339AN_G | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CHN-Channel 20V ... |
FDN327N | ON Semicondu... | -- | 6000 | MOSFET N-CH 20V 2A SSOT-3... |
FDN361AN | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 1.8A SSOT... |
FDN339AN | ON Semicondu... | -- | 4 | MOSFET N-CH 20V 3A SSOT3N... |
FDN335N | ON Semicondu... | -- | 77 | MOSFET N-CH 20V 1.7A SSOT... |
FDN372S | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 2.6A SSOT... |
FDN336P | ON Semicondu... | -- | 1000 | MOSFET P-CH 20V 1.3A SSOT... |
FDN338P | ON Semicondu... | -- | 216000 | MOSFET P-CH 20V 1.6A SSOT... |
FDN371N | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 20V 2.5A SSOT... |
FDN361BN | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 1.4A SSOT... |
FDN360P | ON Semicondu... | -- | 17 | MOSFET P-CH 30V 2A SSOT3P... |
FDN342P | ON Semicondu... | -- | 15000 | MOSFET P-CH 20V 2A SSOT-3... |
FDN304P | ON Semicondu... | -- | 1307 | MOSFET P-CH 20V 2.4A SSOT... |
FDN304PZ | ON Semicondu... | -- | 60000 | MOSFET P-CH 20V 2.4A SSOT... |
FDN308P | ON Semicondu... | -- | 9000 | MOSFET P-CH 20V 1.5A SSOT... |
FDN337N | ON Semicondu... | -- | 561000 | MOSFET N-CH 30V 2.2A SSOT... |
FDN352AP | ON Semicondu... | -- | 331 | MOSFET P-CH 30V 1.3A SSOT... |
FDN338P_G | ON Semicondu... | 0.0 $ | 1000 | INTEGRATED CIRCUITP-Chann... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

MOSFET N-CH 800V 14A TO-247N-Channel 800...

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

MOSFET N-CH 200V 72A TO-268N-Channel 200...

MOSFET N-CH 800V 9A TO-268N-Channel 800V...
