FDN338P Allicdata Electronics
Allicdata Part #:

FDN338PTR-ND

Manufacturer Part#:

FDN338P

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 20V 1.6A SSOT3
More Detail: P-Channel 20V 1.6A (Ta) 500mW (Ta) Surface Mount S...
DataSheet: FDN338P datasheetFDN338P Datasheet/PDF
Quantity: 216000
Stock 216000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SuperSOT-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 500mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 451pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 115 mOhm @ 1.6A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The FDN338P is a high-speed, low temperature coefficient, high voltage n-channel FET-based single transistor. It is a type of transistor with a single gate that can be used for a variety of applications. This type of transistor is used in digital logic and high-frequency circuits due to their ability to handle high power levels without significant degradation. The FDN338P is designed to operate directly from a 12V supply and is also compatible with 15V and 18V supplies.

The FDN338P is manufactured using advanced MOSFET fabrication technologies which enable its high-speed and low temperature coefficient characteristics. This makes it suitable for use in environments where temperature swings occur, such as in automotive systems or for consumer applications. To ensure its reliable operation in these situations, the FDN338P is designed to have a high avalanche breakdown voltage and a low gate-to-source breakdown voltage.

The working principle behind the FDN338P is based on the basic MOSFET function. It is the same as a conventional FET, but with one of the two gates replaced by a metal oxide semiconductor (MOS). This MOSFET gate allows for a larger range of voltages to be accepted and passes it through to the drain. If the voltage across the gate is sufficient, then an electron current is present and passes through the drain. This current can then be used to switch on and off digital logic and other devices.

The FDN338P has been designed to be extremely reliable and to provide consistent performance in a wide range of applications. Its performance is largely impacted by the environment in which it is used; however, it is designed to function in high temperature and humidity conditions without suffering long-term degradation. It is also capable of operating at high frequencies, making it suitable for use in high-frequency circuits such as those used in automotive systems. Its high voltage capability also makes it suitable for use in switching applications.

The FDN338P can be used in a wide range of circuits and systems, including automotive and consumer applications. Its low temperature coefficient, high frequency, and high voltage capability make it suitable for use in many different applications. These include such diverse applications as switching, power management, and digital logic. Its small package size also makes it ideal for use in space-constrained environments.

In summary, the FDN338P is a high-speed, low temperature coefficient, high voltage n-channel FET-based single transistor. It is designed to operate directly from a 12V supply and is also compatible with higher voltage supplies. It is suitable for use in environments where temperature swings occur and its high voltage and high frequency capability make it suitable for many different applications. Its small package size also makes it a great choice for use in space-constrained environments.

The specific data is subject to PDF, and the above content is for reference

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