FDN335N Discrete Semiconductor Products

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The FDN335N is a single N-channel Enhancement Mode Bipolar Field Effect Transistor (FET) designed for general purpose amplification and switching applications. It is a quite versatile device with a a wide range of features and abilities designed to suit almost any application. In this article we will explore the application field and working principle of the FDN335N.

Features of the FDN335N

The FDN335N is a medium power FET that is designed to handle up to 20 volts and 5 mA at an operating frequency of 100kHz–300kHz. It is manufactured with a depletion mode p-type drain for high reliability and low on resistance of just 0.7 ohms. The transistor has a high voltage capability of 100 volts with a maximum drain current of 3.2 amps. Additionally, the FET has an on-state RDS(on) of just 0.22 ohms and a compact package size of just 3mm2.

The FDN335N offers a wide range of features that make it suitable for a wide range of applications. These include a very low on resistance, an extremely low RDS(on), wide operating temperature range (-55°C to +125°C), low cost, and a wide range of package sizes.

Applications of the FDN335N

The FDN335N can be used in a variety of applications. Its high on-state resistance and low RDS make it suitable for use in low-current applications such as LED lighting and control, power supply regulation, and high-current switching. The device is also ideal for use in DC-DC converters, load current monitoring, high-efficiency power supplies, and power amplifiers.

The FDN335N can also be used for automotive applications, as it is capable of handling a wide operating temperature range. It can be used for applications such as DC motor control, temperature control, and lighting control. The device is also suitable for use in industrial automation, as it can provide precise control in a wide range of situations.

Working Principle of the FDN335N

The FDN335N is a single N-channel enhancement mode FET transistor, which makes use of two distinct electrical contacts. The two contacts are the gate and the source. The gate is the control element and is used to control the current flow by inducing a voltage on the gate-to-drain capacitance. When a voltage is applied to the gate terminal it establishes a conducting channel between the source and drain terminals and allows current to flow through.

The FET is an enhancement mode device, meaning that it requires a positive voltage applied to the gate terminal to turn on. When the voltage on the gate is below a certain level, the FET is essentially off, and no current can flow through. However, when the voltage applied to the gate exceeds a certain threshold, the FET is turned on, and current can flow.

The FDN335N also has two distinct operating states, namely the “cutoff” and “saturation” states. In the cutoff state, the FET is essentially off, and no current can flow through. In the saturation state, the FET is turned on, and current is allowed to flow. The transition between the two states is controlled by the gate voltage and can be used to regulate the current flow in an application.

Conclusion

The FDN335N is a versatile single N-channel enhancement mode FET transistor that is capable of handling up to 20 volts and 5 mA at an operating frequency of 100 kHz–300 kHz. The device has a low on-state resistance and an extremely low RDS and is suitable for a wide range of applications, including LED lighting and control, power supply regulation, DC-DC converters, load current monitoring, automotive applications, and industrial automation. Additionally, the device has two distinct operating states, namely cutoff and saturation, and can be used to regulate the current flow in an application.

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