FDN338P_G

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The FDN338P_G is a high-performance dual N-channel MOSFET transistor designed for high-power switch and logic applications. As a member of the latest series of FETs from ON Semiconductor, it boasts an impressive range of features, including a high-frequency operating range, low input capacitance, low gate-charge and minimal parasitic capacitance. This makes it ideal for a range of applications, from high-frequency power switching in consumer and industrial electronics to logic switching on boards and circuits.

The FDN338P_G horizontally symmetric dual N-channel MOSFET transistor is fabricated by depositing the basic materials of the integrated circuit directly onto the silicon substrate. The first step, called the submicron process, is used to form individual transistors. The second step is to deposit the interconnecting layers on top of the transistors. This process of stacking layers is used to create the actual circuits, which are then tested and packaged for shipment.

The FDN338P_G\'s specifications include drain-source breakdown voltage of 30 volts (VGS = ± 10 V), gate-source voltage range of ± 8 V, drain-source on-resistance of 1.5 ohm (VGS = 4.5 V), total gate charge of 11 nC (typical), gate-source capacitance of 0.7 pF (typical) and gate-drain capacitance of 0.5 pF (typical). The maximum drain-source voltage (VDS) is 25 volts, and the maximum drain current (ID) is 10 amps.

The FDN338P_G supports a wide range of applications, such as high-efficiency, high-frequency and low-power switching, logic switching on boards, and driving loads and LEDs. Its low gate-charge, low input capacitance and minimal parasitic capacitance make it an excellent choice for applications ranging from consumer electronics, computers and communications to industrial automation.

The FDN338P_G works on the principle of source-follower switching. This means that the source is connected to the drain of the FET, so that the voltage between source and drain follows the input voltage. When a logic signal is applied to the gate terminal, the voltage on the gate influences the source-to-drain voltage, which in turn turns the transistor on or off. It also has a unique \'floating source\' design; the source of the FET is separate from the drain, making it ideal for use inswitching and logic applications, as well as protecting circuits from electrostatic discharge (ESD) and other overvoltage events.

In summary, the FDN338P_G is a high-performance N-channel MOSFET designed for a wide range of applications. Its features include high-frequency operating range, low input capacitance, low gate-charge and minimal parasitic capacitance, allowing it to be used in high-efficiency, high-frequency and low-power switching. Additionally, its source follower switching and \'floating source\' design make it suitable for use in logic switching on boards, driving loads and LEDs, as well as protecting circuits from electrostatic discharge and other overvoltage events.

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