FDN339AN Discrete Semiconductor Products

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The FDN339AN is a high-performance, low voltage, N-channel metal oxide semiconductor field effect transistor (MOSFET). This device was designed for use in high-speed, power switching applications with great versatility in various circuit designs. It combines the performance of a high voltage MOSFET and the low voltage driving capability of a low voltage MOSFET. Its key features include low on-state resistance, high RMS current rating, low input capacitance, and excellent thermal performance.

The FDN339AN is an ideal choice for high-speed, power switching applications. It can be used in discrete components, power supplies, and power converters. It can be used in various circuit designs such as low-side and high-side switching, level-shifting, data transmission, and more. The device can also be used for hard switching with low switching losses and low gate drive losses. It is also suitable for continuous-conduction mode (CCM) for soft switching in some applications.

The FDN339AN has a maximum drain-source voltage rating of 30V, a maximum drain-source current rating of 32 A and a maximum ON-state resistance of 1.1Ω. It has an ON-state operating gate threshold voltage of 3.7V. It also has an ON-state gate capacitance of 12pF and an OFF-state gate capacitance of 10pF. This device has a thermal resistance junction-case of 25 C/W. It also has a maximum power dissipation of 50 W.

The working principle of the FDN339AN is based on the principle of a field effect transistor (FET). A FET is a solid-state device with a gate electrode which is used to control the current flow through a channel formed by two source and drain electrodes. A FET can conduct current in a controlled and regulated manner by applying a voltage to the gate electrode. In the case of the FDN339AN, when a positive voltage is applied to the gate electrode, electrons will be attracted to the channel, reducing the channel\'s resistance, and allowing current to flow from the source to the drain. When a negative voltage is applied to the gate electrode, electrons will be repelled from the channel, increasing its resistance, and reducing the current flow.

The main advantages of using the FDN339AN MOSFET are its excellent thermal performance and low power dissipation. Its low RDS(ON), low gate capacitance, and low input capacitance make it an ideal choice for high-speed, power switching applications. The device has a wide range of operating voltages and a wide range of channel lengths and widths. It also offers excellent reliability and ease of implementation in various circuit designs. The device’s excellent thermal performance and low power dissipation make it suitable for applications such as power supplies, power converters, and discrete components.

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