FDN360P Allicdata Electronics
Allicdata Part #:

FDN360PTR-ND

Manufacturer Part#:

FDN360P

Price: $ 3.95
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 30V 2A SSOT3
More Detail: P-Channel 30V 2A (Ta) 500mW (Ta) Surface Mount Sup...
DataSheet: FDN360P datasheetFDN360P Datasheet/PDF
Quantity: 17
1 +: $ 3.95200
10 +: $ 3.83344
100 +: $ 3.75440
1000 +: $ 3.67536
10000 +: $ 3.55680
Stock 17Can Ship Immediately
$ 3.95
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SuperSOT-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 500mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 298pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 80 mOhm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The FDN360P Application Field and Working Principle are two key components that are used in many electronic devices. Specialized in power applications, the FDN360P is a fast-acting and low-power transistor with the ability to produce high currents and to dissipate heat efficiently.

The FDN360P belongs to a family of field effect transistors (FETs). The FET was invented in the 1920s but came into production as an electronic component only in the 1950s. It is a semiconductor device with three or more terminals, and an internal gate that provides a variable resistance between the source and drain terminals. FETs come in a wide variety of types including Metal Oxide Semiconductor Field Effect Transistors (MOSFETs), such as the FDN360P.

MOSFETs are single-transistor devices containing an insulated gate whose voltage can be controlled by an external signal, thus allowing a high-output current gain. Specifically, the FDN360P is a single MOSFET device with a drain current of 800 mA and a drain-source voltage rating of 60V, making it ideal for power applications.

The FDN360P can be used in a variety of power applications including power conversion circuits, switching power supplies, high-speed digital circuits, automotive electronics, and other high current applications. Its unique features are that it can switch very quickly, allowing it to produce high currents while maintaining low power dissipation and thus promoting energy efficiency.

The working principle of the FDN360P is as follows. When the voltage of the application is increased, the voltage on the control terminal (gate) is also increased. This causes the resistance between the source and drain terminals to decrease, allowing more current to flow from the source terminal to the drain terminal. This increase in current is what provides a power gain.

The main advantage of the FDN360P is its ability to rapidly switch on and off to control the current in applications. This makes the device ideal for applications where high output current is desired with low power dissipation. This is why the FDN360P is often found in power conversion circuits, switching power supplies, and other high current applications.

In summary, the FDN360P is a single MOSFET device that provides a high current and low power dissipation. Its unique features make it ideal for use in power conversion circuits, switching power supplies, and other high current applications. By understanding the FDN360P application field and working principle, one can maximize its use to gain maximum performance and efficiency in circuit designs.

The specific data is subject to PDF, and the above content is for reference

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