| Allicdata Part #: | FDP8030LFS-ND |
| Manufacturer Part#: |
FDP8030L |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 30V 80A TO220 |
| More Detail: | N-Channel 30V 80A (Ta) 187W (Tc) Through Hole TO-2... |
| DataSheet: |  FDP8030L Datasheet/PDF |
| Quantity: | 1076 |
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -65°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 187W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 10500pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 170nC @ 5V |
| Series: | PowerTrench® |
| Rds On (Max) @ Id, Vgs: | 3.5 mOhm @ 80A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 80A (Ta) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The FDP8030L is a MOSFET transistor that is used in many modern electronics technologies, such as in switching and power applications. This device is an improved version of the earlier FDPAK8030L series. The two devices are almost identical, but the FDP8030L has a slightly lower RDS(on) value and higher power-handling capabilities.
The FDP8030L is a single-level MOSFET, which means that it is a field-effect transistor (FET) that is designed for single-level operation. The transistor consists of an N-type source and drain, with a gate connected between them. The FET is used to control the flow of current from the source to the drain, by changing the voltage on the gate. When the gate voltage is increased, more current will flow through the device; when the voltage is decreased, less current will flow.
The FDP8030L is ideal for applications that require low on-resistance (RDS(on)). The device has a typical RDS(on) of only 12.5 mOhms at 4.5v. This extremely low value allows the device to be used in high efficiency power applications. In addition, the device also has a very low gate-drain capacitance (Cgd), of only 1.8pF, which makes it perfect for switching applications. And its low turn-on and switching times also make it suitable for use in high-speed applications.
The FDP8030L also has a low leakage current (IDSS), which is less than 1μA. This ensures that the device is not damaged when inadvertent large voltages or currents are applied to it. In addition, the device has a breakdown voltage of 30V, making it suitable for a wide range of applications. The device is also lead-free, making it compliant with RoHS requirements.
The FDP8030L is a perfect device for power efficiency and switching applications. Its extremely low RDS(on), low gate-drain capacitance, and low leakage current make it an ideal choice for many applications such as DC-DC converters, inverters, and other various switching applications.
The specific data is subject to PDF, and the above content is for reference
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