Allicdata Part #: | FDP8443-F085-ND |
Manufacturer Part#: |
FDP8443-F085 |
Price: | $ 2.01 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V TO-220AB-3 |
More Detail: | N-Channel 40V 20A (Ta), 80A (Tc) 188W (Tc) Through... |
DataSheet: | FDP8443-F085 Datasheet/PDF |
Quantity: | 679 |
1 +: | $ 1.82700 |
10 +: | $ 1.65060 |
400 +: | $ 1.17920 |
800 +: | $ 0.93157 |
1200 +: | $ 0.85492 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 188W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 9310pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 185nC @ 10V |
Series: | Automotive, AEC-Q101, PowerTrench® |
Rds On (Max) @ Id, Vgs: | 3.5 mOhm @ 80A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Ta), 80A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Last Time Buy |
Packaging: | Tube |
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:FDP8443-F085 Application Field and Working Principle
FDP8443-F085 is a type of single, enhancement-mode n-channel, IGBT-based Field Effect Transistor (FET). It is developed by the notable semiconductor company Fairchild and marketed mainly for industrial, automotive and consumer uses. FDP8443-F085 is an all-in-one device design featuring high-speed switching and fast body diode.
FDP8443-F085 Application Field
The FDP8443-F085 has been designed with a broad application range. It is an ideal device for switching power control, including SMPS and DC-DC conversions. It can also be used in automotive electronics and motor control. Additionally, it is suitable for a wide range of other point-of-load applications, such as switch mode power supplies, security systems and accent lighting.
Due to its low power consumption, the FDP8443-F085 is an excellent choice for handheld or battery-powered consumer applications – like digital cameras, PDAs and gaming consoles. Additionally, the high-side switch configuration and fast body diode make it suitable for LAN applications.
FDP8443-F085 Working Principle
FDP8443-F085 utilize n-channel enhancement-mode FETs based on IGBT technology. This allows new and improved characteristics and operating conditions such as higher CMOS compatible gate voltages and higher operating temperatures. This design also results in less power consumption and reduced switching losses.
The FDP8443-F085 works by positioning a thin layer of insulating material between the gate and the channel which affects the conductivity of the channel. When a small voltage is applied to the gate, it increases the conductivity of the channel. This allows current to flow from the source to the drain resulting in an on-state, where the transistor can conduct current.
When the voltage is removed, the gate voltage falls and the channel’s current carrying ability drops until no current is being conducted anymore and the transistor is said to be \'off\'. This way, the transistor acts as a switch. By controlling a small gate voltage, the FDP8443-F085 can effectively switch larger currents.
Conclusion
To conclude, the FDP8443-F085 is an ideal device for handheld or battery-powered consumer applications, as well as for switch power control, automotive electronics, motor control and other point-of-load applications. It utilizes n-channel enhancement-mode FETs based on IGBT technology, allowing higher CMOS compatible gate voltages as well as lower power consumption and reduced switching losses. The FDP8443-F085 can effectively switch larger currents by controlling a small gate voltage.
The specific data is subject to PDF, and the above content is for reference
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