FDP8D5N10C

Gate Charge (Qg) (Max) @ Vgs:	34nC @ 10V
Package / Case:	TO-220-3
Supplier Device Package:	TO-220-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	2.4W (Ta), 107W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2475pF @ 50V
Vgs (Max):	±20V
Series:	PowerTrench®
Vgs(th) (Max) @ Id:	4V @ 130µA
Rds On (Max) @ Id, Vgs:	8.5 mOhm @ 76A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	76A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active

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FDP8D5N10C Application Field and Working PrincipleThe FDP8D5N10C is a recently developed, advanced power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) which is being used more commonly for high-power switching and power management applications in a wide range of industries. This article will discuss the application fields and working principle of the FDP8D5N10C MOSFET.Application FieldsThe FDP8D5N10C is suitable for use in a range of applications, including but not limited to motor control, power supplies, motor and solenoid drives, and industrial controllers. Additionally, it can be used in the automotive and electronic entertainment industries for efficient power switching and protection circuitry.Working PrincipleAt its most basic level, the FDP8D5N10C MOSFET is composed of a p-type transistor, a n-type transistor, and a few other components. When a positive voltage is applied to the device\'s gate terminal, it causes a voltage difference across the p-type and n-type transistors that in turn creates an electric field. This field affects the movement of electrons, allowing them to freely flow from the n-type side, through the source and drain terminals, and out to the p-type side. The result is the creation of an electrical current, which is then used to perform switching operations.When the voltage is removed from the gate terminal, the electric field is reversed, blocking the flow of electrons and turning off the current. This makes the FDP8D5N10C ideal for powering and controlling high-powered components such as motors, high-voltage electrical systems, and solenoids.Advantages of FDP8D5N10CThe FDP8D5N10C MOSFET has several advantages over traditional bipolar power transistors and silicon controlled rectifier (SCR) thyristors. It can handle higher voltages and offer better power-switching efficiency due to its lower resistance and higher switching speed. Additionally, its built-in protection circuitry prevents damaging spikes and shorts that can often accompany high-power electrical applications.The FDP8D5N10C also offers improved thermal performance, reducing the risk of overheating and failure due to excessive power dissipation. Finally, its ability to quickly switch between conducting and non-conducting states makes it ideal for controlling a wide range of applications, ranging from low-voltage applications to high-powered motor drives.ConclusionThe FDP8D5N10C is a power MOSFET that offers a range of advantages over traditional bipolar power transistors and SCRs. Its ability to handle higher voltages and efficiently switch between conducting and non-conducting states make it perfect for controlling a variety of applications, from low-voltage electronics to high-powered motor drives. Its built-in protection circuitry prevents shorting and damaging spikes, and its improved thermal performance facilitates efficient and reliable control of high-power electrical systems.

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