
Allicdata Part #: | FDP8870-ND |
Manufacturer Part#: |
FDP8870 |
Price: | $ 1.74 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 156A TO-220AB |
More Detail: | N-Channel 30V 19A (Ta), 156A (Tc) 160W (Tc) Throug... |
DataSheet: | ![]() |
Quantity: | 49 |
1 +: | $ 1.74000 |
10 +: | $ 1.68780 |
100 +: | $ 1.65300 |
1000 +: | $ 1.61820 |
10000 +: | $ 1.56600 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 160W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5200pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 132nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 4.1 mOhm @ 35A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 19A (Ta), 156A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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FDP8870 is part of Fairchild Semiconductor\'s advanced PowerTrench® MOSFET technology. It is designed to achieve high power and performance while also providing improved reliability, low output impedance and high efficiency operation. The FDP8870 is a high power P-channel semiconductor device with typical drain source Rds(on) of 130mΩ and max drain source voltage of -35V. Its drain current rating is at a maximum of -12A.
FDP8870 can be applied in many different fields. It is a great alternative for applications such as mobile power management, load switch , audio and general switching systems, battery management for medium power application and automotive applications such as vehicle’s auxiliary power, interior/exterior lighting, high power DC motor controls, electronic throttle control and body control system.
The working principle of FDP8870 is based on the MoSFET technology, which is a concept of a switch with power MOSFETs to effectively control the switching on and off of current. MoSFETs are FETs (Field Effect Transistors) which have an insulated gate and the current flows through the drain to the source when voltage is applied to the gate. It is one type of solid state device that uses voltage instead of current to control electrical pulses. FDP8870 operates in the same manner—a small voltage applied to the gate is used to ignite or switch off the flow of current. In addition, the FDP8870 has a low on-resistance and high efficiency that helps to reduce power losses and also optimize switching performance.
FDP8870 can handle high current load, and it is based on the characteristic that when the voltage is applied to the gate to turn on the FET, the FET shows a very low resistance between drain and source (accurately known as R ds (on)). This characteristic is the key to having a switch that can control high voltage current without having to dissipate large amounts of heat due to a high resistance on the switch. The FDP8870 has a very low “R ds (on)” of 130 mΩ max and this makes it extremely efficient.
FDP8870 is a great device that can be applied in various fields. Its low R ds (on) makes it an ideal choice for high power applications and its wide range of benefits such as low output impedance, high efficiency and improved reliability, make FDP8870 an ideal choice for high power applications. Moreover, its high current load capacity and low resistance value also make it a great alternative for automotive applications such as vehicle’s auxiliary power, interior/exterior lighting, high power DC motor controls, electronic throttle control and body control system.
The specific data is subject to PDF, and the above content is for reference
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