FDP80N06

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FDP80N06 is a high voltage, high current, low thermal resistance N-channel field-effect transistor (FET) which is specially designed to improve the efficiency, thermal performance, and ease of board layout in a variety of power switching circuits.

The FDP80N06 is a powerful combination of excellent electrical and thermal performance with a wide variety of features designed to reduce power losses. Its outstanding power dissipation capabilities, low input and output capacitance, and excellent avalanche characteristics make it a great choice for high power applications, such as motor control and server power supplies.

Application Field

The FDP80N06 is a widely used N-channel FET for high voltage and high current applications. It is widely used in power supply, DC/DC converters, motor control, power conversion, and switching applications. Additionally, it is suitable for all applications that require fast switching speed, low on-resistance, and high power ratings.

The FDP80N06 offers a low gate charge, high dV/dt capability, and a low on-resistance. It is suitable for PWM circuits, and it provides very low switching losses, allowing efficient performance over a wide range of output voltages and power ratings.

The FDP80N06 offers excellent RF performance, making it ideal for high frequency switching applications. Additionally, its high temperature tolerance and low gate-source capacitance make it suitable for high temperature environments.

Working Principle

The FDP80N06 FET operates on the principle of enhancement-mode MOSFETs, which means that the drain current is controlled by the voltage applied to the gate. The gate voltage determines the threshold voltage of the FET, which is the voltage at which the FET starts to conduct.

The FDP80N06 uses a special construction, which has low R_DS(on) and low gate charge. This construction results in the FET having a maximum drain current rating of 59A, allowing it to handle higher power applications. Additionally, the FET\'s low gate charge ensures that it can be switched rapidly and efficiently.

When the gate voltage is below the threshold voltage, the FET is off and the drain-source resistance is very high. When the gate voltage is increased above the threshold voltage, the FET is switched on and the drain-source resistance is reduced. This reduction in resistance allows current to flow.

The FDP80N06 FET is a popular choice for high power applications due to its superior performance and ease of board design. Its high current and power dissipation capabilities make it suitable for a wide range of power conversion and switching applications.

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