Allicdata Part #: | FDP8N50NZ-ND |
Manufacturer Part#: |
FDP8N50NZ |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 500V TO-220AB-3 |
More Detail: | N-Channel 500V 8A (Tc) 130W (Tc) Through Hole TO-2... |
DataSheet: | FDP8N50NZ Datasheet/PDF |
Quantity: | 388 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 130W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 735pF @ 25V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 10V |
Series: | UniFET™ |
Rds On (Max) @ Id, Vgs: | 850 mOhm @ 4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The FDP8N50NZ is a FET (Field Effect Transistor) commonly used in applications that require a minimal amount of current input. It is a single MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed to have a high input impedance, making it ideal for low power electronics. In addition to its low power capabilities, the device is also used for its high switching speeds and other features.
The FET operates on the principle of an electric field that is created by a gate voltage. When a gate voltage is applied, an electric field is generated that either allows a current to flow between the source and drain or not, depending on the gate voltage. This is also known as the transistor effect, in which a small electric field can control a large amount of current.
The FDP8N50NZ has two main operating states, the triode region and the saturation region. In the triode region, the transistor is operating in linear mode, meaning that it can be used to control voltages and currents. In the saturation region, the transistor operates in switching mode, allowing it to switch a load quickly and efficiently. This makes the FDP8N50NZ ideal for applications where a high switching speed is required.
The FDP8N50NZ has an enabling threshold of 7V, which is the minimum voltage required for it to be switched on. It can handle up to 500mA of continuous drain current and 8A of peak drain current. It also has a very low on-resistance of only 4.2 ohms at 10V, making it very efficient and allowing it to regulate current precisely.
The FDP8N50NZ is used in a wide variety of low power applications such as power supplies, small appliances, and sensors. It is also used in high power motor speed control, automotive fuel delivery systems, and battery management systems. In addition, it is used in high frequency communication systems, such as those used in cellular phone towers, to reduce the power required to transmit data.
In summary, the FDP8N50NZ is a single MOSFET device that is used in applications requiring minimal current input, high switching speeds, and minimal power consumption. It has an enabling threshold of 7V, can handle up to 500mA of continuous drain current, and has an excellent on-resistance of 4.2 ohms at 10V. It is used in a wide variety of low power and high power applications, including motor control, automotive fuel systems, and cellular phone towers.
The specific data is subject to PDF, and the above content is for reference
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