FDP8878

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	40.5W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1235pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	23nC @ 10V
Series:	PowerTrench®
Rds On (Max) @ Id, Vgs:	15 mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	40A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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The FDP8878 is a silicon N-channel TrenchFET® Power MOSFET from Fairchild Semiconductor. It is designed to provide excellent performance in the power management and power protection applications. The FDP8878 is a low-on-resistance device with an enhanced level of ruggedness, making it suitable for use in switching applications.The FDP8878 is an ideal choice for power MOSFETs, as it offers excellent static and dynamic performance. Its low-on-resistance structure makes it suitable for high-bias operation and fast switching speeds, while its robust output characteristics make it well suited for short circuit protection and load regulation. The device’s N-channel MOSFET structure provides the high level of efficiency demanded in power management and power protection applications, while its trench architecture helps to enhance the device’s performance at high currents.The FDP8878 provides a wide range of enhancements and features, making it versatile and reliable for a variety of applications. Its low-on-resistance and rugged structure make it suitable for use in power management applications such as in automotive, telecom, industrial, and consumer electronics applications. The device can also be used in protection circuits such as overcurrent and reverse voltage protection, as well as in high-current switching applications.The FDP8878 is designed for direct switching and switching power supplies. It has an AEC-Q101 qualification for automotive applications, and is optimized for low to moderate switching frequencies. In addition, it has a temperature range of -55°C to +175°C, as well as an integrated body diode, making it suitable for high-side switching applications.The working principle of the FDP8878 is simple yet effective. Its N-channel architecture enables the device to be turned on via the gate terminal and the applied drain-source voltage. When the gate voltage reaches its threshold, the device acts as a switch to allow current to flow between the drain and the source terminal. The on-state resistance of the device is determined by the input gate voltage, making it highly suitable for applications where fast switching is required. The device is also optimized for high current switching, as its trench architecture is designed to improve the device’s body diode performance and reduce the on-state resistance.The FDP8878 is well suited for use in power management and protection applications. Its impressive performance and cost effective design make it an ideal choice for those applications that require robust and reliable performance. Its on-state resistance, rugged design, and integrated body diode make it suitable for high current switching and protection applications.

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