| Allicdata Part #: | FDP8874FS-ND |
| Manufacturer Part#: |
FDP8874 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 30V 114A TO-220AB |
| More Detail: | N-Channel 30V 16A (Ta), 114A (Tc) 110W (Tc) Throug... |
| DataSheet: |  FDP8874 Datasheet/PDF |
| Quantity: | 817 |
Specifications
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 110W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3130pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 72nC @ 10V |
| Series: | PowerTrench® |
| Rds On (Max) @ Id, Vgs: | 5.3 mOhm @ 40A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 16A (Ta), 114A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
Description
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.Transistors - FETs, MOSFETs - Single
The FDP8874 is a versatile single-channel MOSFET (metal-oxide-semiconductor field-effect transistor) with a wide range of possibilities and applications. It is often used in power supply and lighting circuits. Its versatile nature also makes it suitable for applications such as audio amplifiers, switching power converters, motor controls and power management control systems.Description
The FDP8874 is a versatile transistor with high power density. It has a 20V drain-source breakdown voltage and a gate-source breakdown voltage of +/-20V. It has a maximum drain-source on-resistance of 2.2Ω and a maximum gate-source capacitance of 18pF. The device has a low output capacitance and a high input capacitance which provides fast switching times for high speed conditions or high frequency applications.Device Configuration
The FDP8874 is a single-channel device with three terminals: drain, source, and gate. The device is provided in a TO-220 package with top-side gate lead to facilitate gate control. The gate lead can be used to control the bias of the device, and its output impedance is low enough to provide either a slow built-in switch or a very fast switching transistor.Working Principle
The working principle of the FDP8874 is based on the MOSFET\'s capacitive behavior. When a voltage is applied to the gate terminal, it creates an electric field. This electric field produces an inversion layer between the source and the drain, allowing current to flow from the drain to the source. The thickness of the inversion layer is determined by the voltage applied to the gate terminal. The higher the voltage, the thicker the inversion layer and the more current that will flow.Applications
The FDP8874 is a versatile device and can be used in a variety of applications. It can be used in power conversion circuits as a low voltage switch, in high frequency applications as a fast switch, in motor control applications as a current-limit switch, or in light dimming applications. It can also be used in audio amplification circuits or power management control systems for energy efficiency or dimming.Advantages & Disadvantages
The FDP8874 has several advantages over other MOSFETs. Its low output capacitance and high input capacitance ensures fast switching times. Its low on-resistance makes it well suited for high voltage applications. Additionally, its top-side gate lead makes it easier to control the device. One of the main disadvantages of the FDP8874 is its high gate-source breakdown voltage which can be difficult to achieve in certain high temperature applications. The device also has a limited range of drain-source breakdown voltages, so it may not be suitable for all applications.Conclusion
The FDP8874 is a versatile device with a wide range of potential applications. Its low output and high input capacitance helps ensure fast switching times, while its low on-resistance makes it well suited for high power applications. Its top-side gate lead allows for easy control of the device and its wide range of breakdown voltages make it suitable for many applications. However, its high gate-source breakdown voltage and limited drain-source breakdown voltages can limit its use in certain applications.The specific data is subject to PDF, and the above content is for reference
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