FDP8870-F085

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	160W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	5200pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	132nC @ 10V
Series:	PowerTrench®
Rds On (Max) @ Id, Vgs:	4.1 mOhm @ 35A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	19A (Ta), 156A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Last Time Buy
Packaging:	Tube

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FDP8870-F085 is a N-Channel 60V MOSFET typically used in general-purpose high-speed switching applications. It features low gate-drive power requirements and achieves fast switching speed with reduced on-resistance. The FDP8870-F085 provides excellent switching performance for applications requiring low on-state resistance and low gate-drive power. This small, low-power MOSFET is ideal for power buffers, active loads, load switching, low side switching, and high-current LED drive applications. It also has a low gate threshold voltage, making it ideal for various low-voltage applications.The FDP8870-F085 MOSFET can be used in low voltage applications such as mobile phones, portable consumer devices, consumer electronics, and batteries. It is also suitable for high current switching and power applications such as lighting controls, motor drives, and consumer power supplies. This MOSFET is particularly well suited to applications where fast switching times are required, such as consumer electronics, power buffers, and power supplies. It is a useful device for applications requiring low power loss and low switching times.The FDP8870-F085 is a P-channel enhancement-mode MOSFET device that operates from -60V. It is designed for use as a general-purpose switching device with low on-state resistance and fast switching speed. It has a low threshold voltage and high power density, making it an ideal device for a variety of low voltage and high current applications. The FDP8870-F085 is an N-Channel MOSFET that is constructed using an advanced process technology. Unlike conventional N-ch MOSFETs, the FDP8870-F085 is fabricated using a process that uses a unique gate oxidation to produce a very low gate threshold voltage, making it suitable for a wide variety of low voltage applications.The FDP8870-F085 MOSFET has a built-in charge pump module that helps reduce the power dissipation during switching. The device also has a soft start capability, which helps to reduce output voltage spikes and reduce power loss in the system. In summary, the FDP8870-F085 is a N-Channel MOSFET specifically designed for applications that require fast switching times and low on-state resistance. It has a low gate threshold voltage, an advanced process technology with a built-in charge pump, and a soft start. This makes it ideal for a variety of applications such as load switching, active load, low side switching, and high-current LED drive applications. The FDP8870-F085 is a useful device that can be used in a variety of low-voltage applications and offers excellent switching performance.

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