FDP86363-F085

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	300W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	10000pF @ 40V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	150nC @ 10V
Series:	Automotive, AEC-Q101, PowerTrench®
Rds On (Max) @ Id, Vgs:	2.8 mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	110A (Tc)
Drain to Source Voltage (Vdss):	80V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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The FDP86363-F085 is a high-performance, long-lasting, reliable, and low-power Field Effect Transistor (FET) device. It is designed for use in a variety of high-density computer and communication applications, such as micro-processor power and data buses, high-speed switching, high-speed signal processing and noise suppression, radio and television receivers, receiver amplifiers, and high-frequency communication circuits. In order to understand the working principle and application field of the FDP86363-F085, it is important to understand the basics of FETs.
FETs are three terminal devices made up of a semiconductor material, such as silicon, with a metal gate on top. They are classified as either N-type or P-type materials, depending on the nature of the semiconductor material. An N-type material has an excess of electrons while a P-type material has a deficiency of electrons.
FETs are used to amplify or switch electric current, voltage, or power. The FDP86363-F085 is a special type of FET called a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It has a metal gate and an insulating gate oxide layer which form a self-isolated process. This MOSFET structure results in two field plates being separated by a very thin silicon region, called the channel.
When a negative voltage is applied to the gate, the MOSFET is turned on and current flows from the source terminal to the drain terminal. The FDP86363-F085 is particularly efficient in this scenario because its oxide layer is very thin and its channel length is only 8 nanometers. This makes the MOSFET device very fast and efficient.
The FDP86363-F085 is suitable for a wide range of applications, such as power management and control in cellular phones, motor control and switching in digital cameras, and interface circuits in digital TVs. It is also useful in applications requiring high speed switching, - such as computers and high speed communication circuits.
The FDP86363-F085 is composed of a high-quality aluminum, silicon and oxygen mixture, resulting in a robust and reliable device. The FET has a relatively low insertion voltage and a high dynamic load current. It also has a low gate capacitance, making it ideal for high frequency applications. Its low-power operation, combined with its high-speed switching capabilities, make it an attractive choice for a wide range of applications.
The FDP86363-F085 is a long-lasting and reliable FET device. It has extremely low on-resistance, so it can handle large currents without the need for heatsinking. Its low-power operation and low gate capacitance make it well-suited for high-speed switching and signal processing. It is suitable for a wide range of applications, such as power management and motor control in digital cameras and interface circuits in digital TVs. With its low insertion voltage and high dynamic current, and its reliable and robust construction, the FDP86363-F085 is an excellent choice for any high speed digital application.

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