FDP8442

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	254W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	12200pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	235nC @ 10V
Series:	PowerTrench®
Rds On (Max) @ Id, Vgs:	3.1 mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	23A (Ta), 80A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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FDP8442 is an advanced type of field effect transistor. This particular type is classified as a single, as opposed to dual, gate field effect transistor. It was designed to improve on other types of field effect transistors, with improved performance and reliability.The FDP8442 was developed for applications in high voltage and high frequency switching applications. Its high performance and reliability make it a great choice for many applications where fast switching times are important.The FDP8442 is a depletion-mode field effect transistor, meaning that its source electrode is connected to its drain electrode. This connection allows for the flow of electrons between the source and drain when a positive gate voltage is applied. This structure enables the FDP8442 to handle a wide range of voltages and frequencies.The FDP8442 uses a N-channel MOSFET structure in order to control the amount of current that flows through the channel. This structure is capable of handling up to 30V, with a low current drain of 1.8mA. The FDP8442 also offers excellent linearity, providing precise control over the desired current output.In addition to its high voltage and frequency performance, the FDP8442’s structure also allows for low power dissipation. This makes it an ideal choice for applications where low power consumption is vital.The FDP8442 also features built-in protection features that prevent the device from damage in the event of an electrical overstress (EOS) event. This feature helps to ensure that the FDP8442 will not be damaged by sudden voltage spikes or other occurrences.The FDP8442 is an excellent choice for applications that require dependable high voltage and frequency switching as well as low power dissipation. Its structure allows for precise control and excellent linearity, and its protection features ensure that the device will not suffer from damage due to electrical overstress. The FDP8442 is an ideal choice for a wide range of applications.

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