FQB30N06TM

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Field-effect transistors, or FETs, are commonly used in modern electronics and are devices whose conductivity is influenced by a controlling electric field. A FQB30N06TM is a type of N-channel field-effect transistor (FET), specifically an advanced power MOSFET, which is a type of FET with utmost performance applied in switching applications. This advanced technology MOSFET is hosted in a TO-220 package, allowing a greater power dissipation.

The FQB30N06TM features an over 30V drain-to-source breakdown voltage (BVdss) and a ± 18A maximum drain current (Id). This transistor has an on resistance gate charge (Qg) of 17.2nC and an input capacitance (Ciss) of 344pF. The device can handle peak pulses as high as 45A for a maximum of 10 milliseconds. This transistor allows for a maximum total power dissipation of 55W and a thermal resistance (Rthj-c) of 2.9°C/W when mounted with a heatsink. It is suitable for use in voltage and current shifters, choppers, converters, power switching regulators, amplifiers, solenoids, relays, and other related devices.

A FQB30N06TM transistor works by controlling the amount of current flowing into a conductive device by using a different voltage applied to its gate. This is done by changing the conductivity of electrons traveling between the drain and source, and bringing it to either a low or high impedance state. To transition between the low and high impedance states, the voltage applied to the gate must surpass the threshold voltage of the device.

By saturating the device, when the gate voltage is high, current can flow freely between the drain and source, while the voltage drops of the device is extremely low. Otherwise, when the gate voltage is low, current flow is blocked and the voltage of the device is equivalent to that of the drain.

The FQB30N06TM also boasts over-temperature protection (OTP), Infineon\'s special protection which monitors the temperature of the system and prevents any permanent damage from occurring from too high of a temperature. This is especially important in blocking applications because too much energy can damage the device.

To ensure proper operation, the transient thermal resistance (Rth ja-c) must be taken into account and must be low enough to ensure the temperature of the device does not exceed the maximum allowed temperature under any conditions. Finally, the reverse transfer capacitance (Crss) of the transistor needs to be sufficiently low to reduce the transients induced by the electric field.

The FQB30N06TM is an advanced power MOSFET with a decent current and power handling which is suitable for applications such as voltage and current shifters, choppers, converters, power switching regulators, amplifiers, solenoids, relays, and other related devices. With an over 30V drain-to-source breakdown voltage (BVdss) and ±18A maximum drain current (Id), the device offers reliable over-temperature protection (OTP) and a low reverse transfer capacitance (Crss). This FET also has an on resistance gate charge (Qg) of 17.2nC and an input capacitance (Ciss) of 344pF.

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