FQB32N12V2TM

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

FQB32N12V2TM is a Field-Effect Transistor (FET) manufactured by NXP Semiconductors. It is a single N-Channel enhancement-mode Field-Effect Transistor, also known as a “mosfet” due to its superior performance in various application fields. FQB32N12V2TM is widely used in commercial and industrial high frequency applications, including power amplifiers, high speed switching of power control, RF power detection, and other circuits requiring high voltage/current operation.

FETs offer a variety of advantages over traditional BJT transistors, including lower power consumption, fewer parasitic losses, wider temperature range, and extremely fast switching speeds. They are also easy to design and integrate into most designs. FQB32N12V2TM is an especially impressive FET due to its exceptionally low on-resistance, as low as 5mΩ, and high frequency performance.

The working principle of FQB32N12V2TM is dependent upon its N-Channel enhancement-mode configuration. This is achieved by placing two gates on the device, one of which is connected to the drain and the other to the source. A voltage is applied to the control gate, causing the device to become forward-biased, allowing flow of current along the conducting channel. Control of the channel conductivity is determined by the amount of gate-source voltage or bias applied.

The FQB32N12V2TM has a wide range of uses in today’s world. It has been used in applications such as high power amplifiers, power control switches, electronic level shifters, high frequency analog signal boosting and switching, and even in Lithium batteries for devices such as smartphones.

The FQB32N12V2TM has excellent performance characteristics, allowing it to be used in a wide range of applications. Its features include an optimized on-state resistance, low gate charge and low capacitance, which make it ideal for high speed analog and RF applications. Unlike BJTs, FETs require no base current to open up the conducting channel, thus reducing power consumption. Its low on-resistance makes it suitable for high frequency power control, allowing it to switch rapidly at high voltages.

In addition to its excellent performance characteristics, the FQB32N12V2TM has excellent electrical parameters. It is capable of operating at temperatures ranging from -55° to 150° C, and its maximum drain-source voltage rating is 75V. These parameters ensure that it can be used in a wide variety of commercial and industrial high frequency applications.

The FQB32N12V2TM is an excellent choice for applications requiring high performance and low power consumption. Its N-Channel enhancement-mode design and excellent electrical parameters make it an ideal choice for a wide range of high frequency applications. With its wide temperature range and maximum drain-source voltage rating, it can handle the demands of many commercial and industrial applications.

The specific data is subject to PDF, and the above content is for reference