Allicdata Part #: | FQB3P50TM-ND |
Manufacturer Part#: |
FQB3P50TM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 500V 2.7A D2PAK |
More Detail: | P-Channel 500V 2.7A (Tc) 3.13W (Ta), 85W (Tc) Surf... |
DataSheet: | FQB3P50TM Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.13W (Ta), 85W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 660pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 4.9 Ohm @ 1.35A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.7A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The FQB3P50TM is a field-effect transistor (FET) designed to handle high levels of current, high frequencies and fast switching times. It has a very low on-resistance, allowing it to pass large amounts of current. Additionally, it features a drop-in replacement for devices like the SOT-23, which is a common package form in high-performance analog and digital applications.
The FQB3P50TM is a N-channel MOSFET, typically used for applications such as power switches, load switches and specialty analog switches. It operates in two main modes: the enhancement mode, where an input signal is required to activate the FET; and the depletion mode, where an input signal is not required but the FET remains on. Depending upon the mode of operation, the FET can be used to either switch a signal on or off, or vary the voltage supplied to a load.
The FQB3P50TM features a vertical double-diffused structure, which consists of a deep source region, a heavily doped drain region, and a lightly-doped body region. This structure gives the FET the ability to handle high power levels in a small area. Additionally, it features a very low on-resistance, which makes it well-suited for high-current applications.
The FQB3P50TM is designed with a special construction to optimize the electrical characteristics. Its source and drain regions have an optimized shape and size to minimize the on-resistance, while its internal gate structure is specially designed to minimize the input capacitance. This allows the FET to switch from saturation to cut-off more quickly, which leads to faster switching response.
The FQB3P50TM is a versatile device and is well-suited for a variety of applications. It can be used for load switching, power switching, signal switching, and current sensing, among others. In addition, it is also suitable for use in a variety of analog applications, including signal conditioning, signal switching, and audio/video switching. In all of these applications, the FQB3P50TM is designed to provide reliable and consistent performance.
In summary, the FQB3P50TM is a versatile, high-performance FET designed to handle large amounts of current, high frequencies and fast switching times. It features an optimized construction which allows it to pass large amounts of current while maintaining a low on-resistance, and it is suitable for a wide variety of applications. As such, it is a popular choice for many designers seeking to increase the performance of their systems.
The specific data is subject to PDF, and the above content is for reference
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