FQB3P50TM Allicdata Electronics
Allicdata Part #:

FQB3P50TM-ND

Manufacturer Part#:

FQB3P50TM

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 500V 2.7A D2PAK
More Detail: P-Channel 500V 2.7A (Tc) 3.13W (Ta), 85W (Tc) Surf...
DataSheet: FQB3P50TM datasheetFQB3P50TM Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263AB)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.13W (Ta), 85W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Series: QFET®
Rds On (Max) @ Id, Vgs: 4.9 Ohm @ 1.35A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The FQB3P50TM is a field-effect transistor (FET) designed to handle high levels of current, high frequencies and fast switching times. It has a very low on-resistance, allowing it to pass large amounts of current. Additionally, it features a drop-in replacement for devices like the SOT-23, which is a common package form in high-performance analog and digital applications.

The FQB3P50TM is a N-channel MOSFET, typically used for applications such as power switches, load switches and specialty analog switches. It operates in two main modes: the enhancement mode, where an input signal is required to activate the FET; and the depletion mode, where an input signal is not required but the FET remains on. Depending upon the mode of operation, the FET can be used to either switch a signal on or off, or vary the voltage supplied to a load.

The FQB3P50TM features a vertical double-diffused structure, which consists of a deep source region, a heavily doped drain region, and a lightly-doped body region. This structure gives the FET the ability to handle high power levels in a small area. Additionally, it features a very low on-resistance, which makes it well-suited for high-current applications.

The FQB3P50TM is designed with a special construction to optimize the electrical characteristics. Its source and drain regions have an optimized shape and size to minimize the on-resistance, while its internal gate structure is specially designed to minimize the input capacitance. This allows the FET to switch from saturation to cut-off more quickly, which leads to faster switching response.

The FQB3P50TM is a versatile device and is well-suited for a variety of applications. It can be used for load switching, power switching, signal switching, and current sensing, among others. In addition, it is also suitable for use in a variety of analog applications, including signal conditioning, signal switching, and audio/video switching. In all of these applications, the FQB3P50TM is designed to provide reliable and consistent performance.

In summary, the FQB3P50TM is a versatile, high-performance FET designed to handle large amounts of current, high frequencies and fast switching times. It features an optimized construction which allows it to pass large amounts of current while maintaining a low on-resistance, and it is suitable for a wide variety of applications. As such, it is a popular choice for many designers seeking to increase the performance of their systems.

The specific data is subject to PDF, and the above content is for reference

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