FQB34P10TM-F085 Discrete Semiconductor Products

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The FQB34P10TM-F085 is a field effect transistor that belongs to the family of MOSFETs (Metal-Oxide-Semiconductor-Field-Effect-Transistor). Specifically, it is a single-gate, enhancement type transistor that is commonly used in high-voltage systems. It is a four-terminal device that consists of an N-type channel, source/drain electrodes, and a gate.

FQB34P10TM-F085 Application Field

The FQB34P10TM-F085 is mainly used in high-voltage, high-power switching applications such as motor drives, DC-DC converters, or switch-mode power supplies. Key advantages of using this device in these applications include its ultra-low on-resistance characteristics, high breakdown voltage ratings, and very low gate charge. Additionally, it has an operating frequency capability up to 5MHz and a fast switching speed, thus making it suitable for use in high-performance applications.

FQB34P10TM-F085 Working Principle

The FQB34P10TM-F085 works on the principle of channel enhancement. The transistor consists of an N-type channel between the source and the drain. To turn the transistor on, a positive voltage is applied to the gate. This creates a field effect, inducing a depletion zone around the N-type channel which ‘closes’ and allows current to flow through the channel. When the gate voltage is removed, the depletion zone fades and the channel is ‘opened’, preventing current from flowing.

As a result, the gate voltage can be used to control the current flowing through the N-type channel, making it an excellent choice for high-voltage, high-power applications that require fast switching speeds. Additionally, the N-type channel and the gate of the FQB34P10TM-F085 are isolated by an oxide layer, making it an effective device for insulating large-scale power electronics.

Conclusion

The FQB34P10TM-F085 is a high-performance, high-voltage MOSFET that is ideally suited for a wide range of switching and power control applications. The device’s working principle is based on the channel enhancement principle, which makes it very effective in controlling current flow in high-power, high-voltage applications. Additionally, its ultra-low on-resistance, high breakdown ratings, and fast switching speed make it suitable for use in high-performance systems where speed and power are key requirements.

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