FQB3N40TM

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D²PAK (TO-263AB)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	3.13W (Ta), 55W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	230pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	7.5nC @ 10V
Series:	QFET®
Rds On (Max) @ Id, Vgs:	3.4 Ohm @ 1.25A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	2.5A (Tc)
Drain to Source Voltage (Vdss):	400V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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FQB3N40TM Application Field and Working Principle

The FQB3N40TM is a fast dual n-channel enhancement mode power MOSFET, which is designed with a variety of applications in mind. This device, based on its package format, is suitable for standard surface mount type applications and is optimized for operation at elevated temperatures. It is developed for use in different types of equipment, including cellular phones and other portable communication systems that use low voltage power sources.This MOSFET device is a unique type of transistor that is increasingly being used to replace the traditional silicon bipolar junction transistor (BJT) in both low-power electronic devices and as a high-power amplifier. It\'s also commonly used in audio amplifiers and switch-mode power supplies. The FQB3N40TM is capable of providing very high efficiency and very low on-resistance.The FQB3N40TM, like all MOSFETs, has three terminals - the source, gate, and drain. This device has an advantage over BJTs, because it does not require a base or a gate current to be maintained in order to switch on or off. This is a result of the electronic field effect that it produces and is one of the main benefits of using this type of transistor.The main components of the FQB3N40TM are two n-type semiconductor layers, which are both separated by a thin gate oxide layer. The bottom layer corresponds to the source, while the top layer corresponds to the drain. When the transistor is turned on, a positive voltage is applied to the gate terminal which attracts electrons. These electrons travel through the gate oxide layer and are then injected into the channel between the source and the drain. This creates an inversion region where there are holes, which are essentially where the electrical current is allowed to flow.The major design features of the FQB3N40TM include its extremely low on-resistance, high switching speed, and superior thermal and power dissipation capabilities. Additionally, its gate to drain breakdown voltage is extremely high. In addition, it can also withstand higher voltage levels than other MOSFETs, making it suitable for use in higher power applications.The FQB3N40TM can be used in many types of electronic circuits, including motor drives and both linear and switching voltage regulator circuits. This MOSFET is particularly useful for applications that require high switching speed and low power dissipation. Additionally, its high-power capabilities make it useful for video amplifier circuits and high-power audio amplifiers.Overall, the FQB3N40TM is an ideal choice for use in different types of electronic applications where low power dissipation, high switching speed, and superior thermal and power dissipation capabilities are required. It is both reliable and efficient, making it well-suited for a variety of different types of applications. It is also relatively inexpensive compared to its competitors, making it a cost-effective option for many different types of devices.

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