Allicdata Part #: | FQB3N80TM-ND |
Manufacturer Part#: |
FQB3N80TM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 800V 3A D2PAK |
More Detail: | N-Channel 800V 3A (Tc) Surface Mount D²PAK (TO-26... |
DataSheet: | FQB3N80TM Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | -- |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 690pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 19nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 5 Ohm @ 1.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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FQB3N80TM is a powerful, high-speed N-channel Enhance Mode Field Effect Transistor (MOSFET) from Fairchild Semiconductor. It is designed to withstand voltage surges and can be used in high-voltage, low-current applications. The device is designed for use as a power switch in AC/DC and DC/DC switching circuits.
This MOSFET is engineered for a variety of applications, including telecommunications, industrial control systems, home appliances, measuring systems and signal control. The device can also be used in the automotive industry when used as a high-speed switch, which provides the system with enhanced signal control and signal precision.
The main component of this MOSFET is the field effect transistor (FET). This type of transistor operates by controlling the gate side of the transistor, which is used to control the flow of electric current. The depletion region between the source and gate of the transistor is very important in this regard. In this type of transistor, the impedance of the gate is determined by the source voltage and current, and the gate voltage.
The FQB3N80TM utilizes an N-channel enhancement mode FET, which operates by allowing current to flow through the channel when a positive voltage is applied to the gate and then cutting off the flow of current when the gate voltage is returned to zero. This ensures that the device will turn off in the absence of any input signal. The device\'s gate remains in the “on” state whenever the gate voltage is between the two limits, which ensures the device is always in the “on” state.
It is important to note that the FQB3N80TM is designed for low-current applications, as its total gate charge is relatively low compared to other types of FETs. It is also designed to handle higher voltages, which makes it suitable for high-voltage applications. The device also features a low on-resistance, which helps to reduce power losses.
The FQB3N80TM can be used in a variety of systems, from telecommunications, industrial control systems, home appliances and measuring systems, to signal control and automotive applications. In each application, the FQB3N80TM is able to provide efficient, reliable and high-performance power switching for systems. As a result, the device can help reduce power losses and provide enhanced signal control and signal precision.
The specific data is subject to PDF, and the above content is for reference
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