FQB3N80TM Allicdata Electronics
Allicdata Part #:

FQB3N80TM-ND

Manufacturer Part#:

FQB3N80TM

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 800V 3A D2PAK
More Detail: N-Channel 800V 3A (Tc) Surface Mount D²PAK (TO-26...
DataSheet: FQB3N80TM datasheetFQB3N80TM Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263AB)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): --
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Series: QFET®
Rds On (Max) @ Id, Vgs: 5 Ohm @ 1.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

FQB3N80TM is a powerful, high-speed N-channel Enhance Mode Field Effect Transistor (MOSFET) from Fairchild Semiconductor. It is designed to withstand voltage surges and can be used in high-voltage, low-current applications. The device is designed for use as a power switch in AC/DC and DC/DC switching circuits.

This MOSFET is engineered for a variety of applications, including telecommunications, industrial control systems, home appliances, measuring systems and signal control. The device can also be used in the automotive industry when used as a high-speed switch, which provides the system with enhanced signal control and signal precision.

The main component of this MOSFET is the field effect transistor (FET). This type of transistor operates by controlling the gate side of the transistor, which is used to control the flow of electric current. The depletion region between the source and gate of the transistor is very important in this regard. In this type of transistor, the impedance of the gate is determined by the source voltage and current, and the gate voltage.

The FQB3N80TM utilizes an N-channel enhancement mode FET, which operates by allowing current to flow through the channel when a positive voltage is applied to the gate and then cutting off the flow of current when the gate voltage is returned to zero. This ensures that the device will turn off in the absence of any input signal. The device\'s gate remains in the “on” state whenever the gate voltage is between the two limits, which ensures the device is always in the “on” state.

It is important to note that the FQB3N80TM is designed for low-current applications, as its total gate charge is relatively low compared to other types of FETs. It is also designed to handle higher voltages, which makes it suitable for high-voltage applications. The device also features a low on-resistance, which helps to reduce power losses.

The FQB3N80TM can be used in a variety of systems, from telecommunications, industrial control systems, home appliances and measuring systems, to signal control and automotive applications. In each application, the FQB3N80TM is able to provide efficient, reliable and high-performance power switching for systems. As a result, the device can help reduce power losses and provide enhanced signal control and signal precision.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "FQB3" Included word is 19
Part Number Manufacturer Price Quantity Description
FQB34N20TM-AM002 ON Semicondu... 1.05 $ 1000 MOSFET N-CH 200V 31A D2PA...
FQB34N20LTM ON Semicondu... -- 1600 MOSFET N-CH 200V 31A D2PA...
FQB34P10TM ON Semicondu... -- 3200 MOSFET P-CH 100V 33.5A D2...
FQB33N10LTM ON Semicondu... -- 3200 MOSFET N-CH 100V 33A D2PA...
FQB30N06LTM ON Semicondu... -- 6400 MOSFET N-CH 60V 32A D2PAK...
FQB34P10TM-F085 ON Semicondu... 1.23 $ 1000 MOSFET P-CH 100V 33.5A D2...
FQB3N60CTM ON Semicondu... 0.0 $ 1000 MOSFET N-CH 600V 3A D2PAK...
FQB3N30TM ON Semicondu... 0.0 $ 1000 MOSFET N-CH 300V 3.2A D2P...
FQB3N40TM ON Semicondu... 0.0 $ 1000 MOSFET N-CH 400V 2.5A D2P...
FQB3N25TM ON Semicondu... 0.0 $ 1000 MOSFET N-CH 250V 2.8A D2P...
FQB3P20TM ON Semicondu... -- 1000 MOSFET P-CH 200V 2.8A D2P...
FQB3N90TM ON Semicondu... 0.0 $ 1000 MOSFET N-CH 900V 3.6A D2P...
FQB32N12V2TM ON Semicondu... 0.0 $ 1000 MOSFET N-CH 120V 32A D2PA...
FQB32N20CTM ON Semicondu... -- 1000 MOSFET N-CH 200V 28A D2PA...
FQB33N10TM ON Semicondu... -- 1000 MOSFET N-CH 100V 33A D2PA...
FQB30N06TM ON Semicondu... 0.0 $ 1000 MOSFET N-CH 60V 30A D2PAK...
FQB3P50TM ON Semicondu... -- 1000 MOSFET P-CH 500V 2.7A D2P...
FQB3N80TM ON Semicondu... -- 1000 MOSFET N-CH 800V 3A D2PAK...
FQB34P10TM-F085P ON Semicondu... 0.0 $ 1000 PMOS D2PAK 100V 60 MOHMP-...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics