FQB34N20TM-AM002 Discrete Semiconductor Products

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The FQB34N20TM-AM002 is a high-side, low-charging, channel enhancement, N-channel enhancement mode power MOSFET. It is designed to minimize internal gate source capacitance, making it ideal for power saving applications. Its advanced process techniques, high-grade silicon chip materials, and uncompromising testing provide superior performance and durability.

The FQB34N20TM-AM002 offers excellent switching characteristics which make it suitable for use in various applications. It is designed to be used mainly for switching power supplies for electronic products with frequent current and voltage changes. It can also be used as a DC-DC converter switch, in LED driver circuits, and as a motor drive switch. The FQB34N20TM-AM002 is available in a 4-pin TO-220F package.

Working Principle

The FQB34N20TM-AM002 is an enhancement mode MOSFET, meaning that the field effect when the Gate voltage is positive with respect to the Source will turn it on. It is a voltage-controlled device, meaning that its resistance between the Drain and Source terminals is dependent on the Gate voltage applied. The higher the Gate voltage, the lower the effective resistance of the device, allowing current to flow. If the voltage applied to the Gate is lowered, the effective resistance of the device increases, blocking the current.

The FQB34N20TM-AM002 is designed for high-side switching. This means that the voltage applied to the Gate must be higher than the Source for the MOSFET to switch on. In low-side switching circuits, the Gate voltage is lower than the Source terminal. It is important to remember that in order for the FQB34N20TM-AM002 to switch on, the Gate voltage must be higher than the Source voltage.

The FQB34N20TM-AM002 also has a low turn-on charge, making it ideal for power saving applications. It requires a relatively small input current to turn it on. This reduces the amount of power that must be drawn from the power supply, which provides further energy savings. Additionally, the low turn-on charge allows the device to switch on and off quickly, reducing the time spent in the transition state and thus resulting in a higher efficiency power switch.

In addition to its excellent switching characteristics, the FQB34N20TM-AM002 is designed to minimize the internal gate-source capacitance. This feature reduces losses due to capacitive reflux during switching, resulting in higher efficiency and performance. The FQB34N20TM-AM002 also features advanced process techniques, high-grade silicon chip materials, and uncompromising testing, providing superior performance and durability.

Therefore, the FQB34N20TM-AM002 is an ideal choice for various power saving applications, such as switching power supplies, DC-DC converters, LED drivers, and motor drives. Its low turn-on charge, minimal gate-source capacitance, and robust design make it suitable for a wide variety of applications, making it a top choice for power saving circuit designs.

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