Allicdata Part #: | FQB34P10TM-F085P-ND |
Manufacturer Part#: |
FQB34P10TM-F085P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | PMOS D2PAK 100V 60 MOHM |
More Detail: | P-Channel 100V 33.5A (Tc) 3.75W (Ta), 155W (Tc) Su... |
DataSheet: | FQB34P10TM-F085P Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 33.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 60 mOhm @ 16.75A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 10V |
Vgs (Max): | ±25V |
Input Capacitance (Ciss) (Max) @ Vds: | 2910pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 3.75W (Ta), 155W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D²PAK (TO-263) |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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The FQB34P10TM-F085P is a single N-channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) from Fairchild Semiconductor. It belongs to a family of N-channel enhancement mode MOSFETs manufactured with a thin,thick-oxide layer over a heavily doped drain region to ensure low on-state resistance even at very low drain-source voltage. This device has the advantage of high packing density, resulting in an efficient use of board space. It is often used as a general purpose switch in a variety of applications, such as audio, video and data communications, motor control, and power switching.
The FQB34P10TM-F085P is a depletion-type MOSFET, which is triggered by positive voltage applied to the gate. When no voltage is applied to the gate, there is no current flow between the source and drain. When a positive voltage is applied, the gate-source threshold voltage (Vgs) begins to drop, allowing current to flow from the source to the drain. The amount of current that can flow is determined by the size of the channel, or the channel width, which is determined by the magnitude of the applied voltage.
The FQB34P10TM-F085P is able to handle moderate voltage and current levels. It can operate over a wide range of input voltages, up to 20V, and can handle a continuous drain current of up to 10A. It has a breakdown voltage of 20V. Its on-state resistance, rd(on) is just 0.9 ohm, so it is very efficient at low drain-source voltages. Its dielectric strength is 30V, so it can be safely used in applications where a high surge voltage could be present.
The FQB34P10TM-F085P is frequently used in power switching applications, as it can handle high current and voltage levels, as well as providing excellent efficiency. It can be used in audio amplifiers or TV receivers, as it is well-suited for low voltage supply applications. It is also commonly employed in data communications applications, as its fast switching speed makes it ideal for high speed data transmission. It can even be used for the control elements of a relay or solenoid, as it can be quickly pulsed on and off with a pulse of voltage.
The FQB34P10TM-F085P is a reliable single N-channel MOSFET from Fairchild Semiconductor. It is a depletion-type MOSFET, meaning it is switched on by a positive voltage applied to the gate, so it is ideal for on/off control in applications such as power switching. It is efficient at low drain-source voltages, has a breakdown voltage of 20V and can handle a continuous drain current of up to 10A. The FQB34P10TM-F085P is well-suited for use in audio, video and data communications, motor control, and power switching applications.
The specific data is subject to PDF, and the above content is for reference
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