FQB3N30TM

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The FQB3N30TM is a single N-channel enhancement mode MOSFET with a very low on-resistance and is available in a TO-220 package. It is designed for high frequency switching applications such as routers and power converters.

Applications

The FQB3N30TM is designed to be an excellent choice for power converters, routers, high frequency converters, and other applications where low on-resistance is required. Specifically, it is designed to reduce switching losses in converters with high frequency operations. It is also especially suitable for DC-DC converters, low voltage motor drivers, boost converters and AC motor drivers.

Working Principle

The functioning of the MOSFET is based on the principle of minority charge carrier injection, in which carriers of opposite type to the majority-carrier injection areas move a certain distance within the MOSFET junction, thus altering the behavior of the device. When a gate voltage is present, a microscopic depletion region near the gate edge is formed and expands into the MOSFET body. This depletion region effectively reduces the area available for majority-carrier injection. Thus, a higher gate voltage is required before the majority-carrier injection can occur. This means that the MOSFET turns "ON" when higher gate voltage is applied, and turns "OFF" when lower gate voltage is applied. This has the effect of reducing gate losses and increasing gate speed.

Advantages of the FQB3N30TM

The advantages of the FQB3N30TM are its low on-resistance and reduced edge capacitance for efficient switching. This MOSFET also eliminates the need for a heatsink in many applications since it dissipates heat more efficiently due to its integrated Copper leadframe construction. The FQB3N30TM also offers improved switching performance with faster switching speeds and lower feed-through voltage. In addition, it has improved thermal stability and reliable operation.

Conclusion

The FQB3N30TM is the ideal device for high frequency switching applications such as routers and power converters. Its low on-resistance reduces switching losses and its integrated Copper leadframe construction dissipates heat more efficiently. It also offers improved switching performance with faster switching speeds and lower feed-through voltage. In addition, it has improved thermal stability for reliable operation. The FQB3N30TM is a good choice for any application where low on-resistance and fast switching speeds are required.

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