FQB3N60CTM

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The FQB3N60CTM is a state-of-the-art power MOSFET by Fairchild Semiconductor, suitable for applications ranging from industrial to consumer electronics. It is rated at an on-state resistance of 3.6 Ohms, with a breakdown voltage of 600V, and a maximum gate-source voltage of ±20V. This device is a ideal choice in applications requiring high switching frequency, such as DC-DC converters, SMPS, motor driver, and lighting ballast.

Application Field

The FQB3N60CTM MOSFET primarily finds use as a switch in a variety of power circuits, as its exceptional thermal performance, low gate charge, and fast switching speed help achieve increased power efficiency and reliability. Moreover, its low leakage current helps to minimise pre-charge and over-voltage issues. These characteristics make this device suitable for applications such as DC-DC Converters, SMPS, motor drives, lighting ballast, and some consumer electronics.

Working Principle

MOSFETs are made from semiconductor materials such as silicon or silicon-germanium and consist of three electrodes: the source, gate, and drain. A voltage applied to the gate causes a channel of electrons (or holes) to form between the source and drain, allowing current to flow. The on-state resistance of the MOSFET is determined by the width of this channel, which is formed by a thin oxide layer between the gate and the channel. When the gate voltage is below the threshold, the channel is thoroughly depleted and the current is switched off.

The FQB3N60CTM provides superior protection against electrostatic discharge (ESD) up to ±25kV, allowing this device to be used in more sensitive applications. Its low RDS(on) resistance greatly improves efficiency of power switching converters, while its fast switching speeds helps to limit Circuit-induced losses. In addition, its low gate charge and small package size makes it an ideal solution for applications with tight space requirements and harsh environments.

In summary, the FQB3N60CTM is a state-of-the-art MOSFET from Fairchild Semiconductor, which provide superior switching performance, fast switching speed, and protection from ESD. This device offers good reliability and efficiency in a range of power indications, such as DC-DC converters, SMPS, motor drives, lighting ballast, and consumer electronics.

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