FQB34P10TM Discrete Semiconductor Products

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The FQB34P10TM is a self-protected N-Channel MOSFET. It is a type of Field-effect Transistor (FET) commonly used in applications that require moderately high power and voltage. FETs are so useful because they have superior switching characteristics compared to bipolar transistors and allow higher channel density. The FQB34P10TM makes an excellent choice for power in design engineers due to its low on-resistance, tight parameter distribution, and guaranteed break-before-make switch performance. As such, the FQB34P10TM is often used for switching applications in battery-powered devices that require intelligent bi-directional control.

The FQB34P10TM is a three-terminal MOSFET that requires a positive gate voltage for operation. As the FQB34P10TM does not require a high input current, the gate can be driven by a material with a low activation voltage like a switching transistor. The FQB34P10TM features a surge current peak of 8A, and a maximum drain-source voltage of 40V. It has strong protective properties in that it limits the voltage across its drain and source, as well as the current through it. This makes it an excellent choice for protection of circuit components.

The FQB34P10TM is fabricated in one of the most advanced technologies for high-speed and efficient power switching. The high-performance FET is implemented with a symmetrical layout that reduces the electrical stress in the drain, source, and gate terminals. This kind of symmetrical layout makes the device reliable and improves the electrical characteristics of the MOSFET, resulting in improved system performance.

The working principle of the FQB34P10TM is based on the fact that when a positive voltage is applied to the gate, an electrical field is created that causes the electrons present in the semiconductor layer to repel each other. This results in a conductive channel forming between the source and the drain terminals, allowing current flow. As soon as gate to source voltage is removed, the electric field is destroyed, bringing current flow to an end. This action is opposite to the working of a BJT, in which current only stops flowing when the gate to source voltage is high enough.

In addition to its excellent switching characteristics, the FQB34P10TM features low gate threshold voltage and fast switching times, making it suitable for high frequency circuits. It also offers excellent ESD performance and is able to tolerate power losses up to 150W. Its low turn-on and turn-off capacitances make it an ideal choice for high-speed switching circuits that require low propagation delay.

Overall, the FQB34P10TM is an excellent choice for engineers designing power switching applications due to its excellent power saving characteristics, high switching speeds, low gate threshold voltage, and ESD resistance. Thanks to its low on-resistance and embedded self-protection circuity, the FQB34P10TM helps protect circuit components and is suitable for intelligent bi-directional control. As such, it is the perfect choice for switching low to medium power applications in battery-powered devices.

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