| Allicdata Part #: | FQB32N20CTM-ND |
| Manufacturer Part#: |
FQB32N20CTM |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 200V 28A D2PAK |
| More Detail: | N-Channel 200V 28A (Tc) 3.13W (Ta), 156W (Tc) Surf... |
| DataSheet: |  FQB32N20CTM Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D²PAK (TO-263AB) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 3.13W (Ta), 156W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2220pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 10V |
| Series: | QFET® |
| Rds On (Max) @ Id, Vgs: | 82 mOhm @ 14A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 28A (Tc) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The FQB32N20CTM is a preferred choice for many applications that require low on-resistance and fast switching. This N-Channel Enhancement mode MOSFET was specifically designed to provide three important features: high bandwidth, fast switching and low on-resistance. This device is ideal for high frequency, low voltage switching applications, such as those encountered in DisplayPort, HDMI, and VGA.
The FQB32N20CTM is a single N-Channel Enhancement mode MOSFET with an On-resistance of 32 mOhms (max), a typical switching speed of 45 ns and a drain-source breakdown voltage of 100 V. This device also features an extended voltage range and low gate charge.
The FQB32N20CTM is widely used in consumer electronics, automotive, industrial, and medical applications. In consumer applications, it is often used as the gate drive transistor in power supply designs. It can also be used in automotive motor drive and lighting applications where high speed switching is needed. Additionally, it is used in consumer devices such as cellular phones, portable media players and gaming consoles. In industrial applications, it can be used to control power switches in high power applications.
The FQB32N20CTM is an enhancement-mode MOSFET, so it is normally off when no gate voltage is applied. The source is tied to ground and the drain is tied to the power supply voltage. When an appropriate voltage is applied to the gate, the transistor turns on, allowing current to flow from the drain to the source. The ratio of drain current to the gate voltage is called the Transconductance of the device.
The FQB32N20CTM is a great choice for applications that require fast switching, low on-resistance, and high bandwidth. Its extended voltage range and low gate charge makes it ideal for high power applications, while its low on-resistance ensures a high degree of efficiency. Its fast switching speed makes it an ideal choice for applications that require high frequency switching.
The specific data is subject to PDF, and the above content is for reference
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